Rana Sayyah

Satellite test of radiation impact on Ramtron 512K FRAM

The Memory Test Experiment is a space test of a ferroelectric memory device on a low Earth orbit satellite. The test consists of writing and reading data with a ferroelectric based memory device. Any errors are detected and are stored on board the satellite. The data is send to the ground through telemetry once a day. Analysis of the data can determine the kind of error that was found and will lead to a better understanding of the effects of space radiation on memory systems. The test will be one of the first flight demonstrations of ferroelectric memory in a near polar orbit which allows testing in a varied radiation environment. The memory devices being tested is a Ramtron Inc. 512K memory device. This paper details the goals and purpose of this experiment as well as the development process. The process for analyzing the data to gain the maximum understanding of the performance of the ferroelectric memory device is detailed.

Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a common-source amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

Modeling a Common-Source Amplifier Using a Ferroelectric Transistor

This paper presents a mathematical model characterizing the behavior of a common-source (CS) amplifier using a ferroelectric field-effect transistor (FeFET). The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the common-source amplifier is the most widely used amplifier in MOS technology, understanding and modeling the behavior of the FeFET-based common-source amplifier will help in the integration of FeFETs into many circuits.

A MATHEMATICAL MODEL OF A COMMON-DRAIN AMPLIFIER USING A FERROELECTRIC TRANSISTOR

ABSTRACT This paper presents a mathematical model characterizing the behavior of a common-drain amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the amplifier is the basis of many circuit configurations, a mathematical model that describes the behavior of a FeFET-based amplifier will help in the integration of FeFETs into many other circuits.

AN EMPIRICAL STUDY OF A FeFET-BASED ANALOG AMPLIFIER

ABSTRACT The use of ferroelectric field-effect transistors (FeFETs) to create simple amplifiers is not completely understood and has not been extensively studied. This paper summarizes the results of behavioral characterization of a FeFET-based analog amplifier. The characterization incorporates several variables that affect the amplifiers output, including frequency, load resistance, and gate-to-source voltage. More specifically, the relationship between the frequency of the input signal and each of the peak output voltage, phase shift of the output signal, and voltage gain is examined. Also analyzed is the effect of load resistance on each of these three output parameters. These relationships are noted in actual oscilloscope outputs.

Radiation-Hardened Electronics and Ferroelectric Memory for Space Flight Systems

The National Aeronautics and Space Administration (NASA) is developing high-tolerance, radiation-hardened electronics for missions in and beyond Low Earth orbit. Ferroelectric-based electronics are highly viable candidates for these electronics because of their inherent radiation-hardened property. Since standard memory devices are prone to damage caused by radiation, ferroelectric memory may provide the needed radiation-tolerance. To test the effectiveness of ferroelectric random access memory (FRAM) in Low Earth orbit, a 512 K Ramtron FRAM will be flown on a Low Earth orbit satellite that will be launched by NASA. This paper discusses the advantages of ferroelectric electronics and outlines the Low Earth orbit ferroelectric memory test experiment.

A Mathematical Model for the Common-Drain Amplifier Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

This paper presents a new mathematical model created for the common-drain amplifier using metal-ferroelectric-semiconductor field effect transistors (MFSFET). The model developed in this paper is based upon empirical data collected through experimentation with the common-drain amplifier while using a MFSFET. Several parameters are considered when calculating the output voltage, such as varying gate capacitance, input voltage, quiescent point, and power supply voltages. A comparison between collected and modeled data is presented as verification of the models performance when applied to the common-drain configuration.

Mathematical Models of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed in this paper. The models are compared against data collected with MFSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth.

Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

Collected data for both common-source and common-gate amplifiers is presented in this paper. Characterizations of the two amplifier circuits using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed with wider input frequency ranges and additional device sizes compared to earlier characterizations. The effects of the ferroelectric layers capacitance and variation of load, quiescent point, or input signal on each circuit are shown. Advantages and applications of the MFSFET and the circuit performance are discussed.

Expanded Characterization of the Common-Drain Amplifier Using Metal-Ferroelectric-Semiconductor Field Effect Transistors

Data is presented in this paper that was obtained using a metal-ferroelectric-semiconductor field effect transistor (MFSFET) in a common-drain amplifier configuration. The empirical data shown has been collected using larger drain voltages than previously seen, which helps to further understand and characterize the interesting operation of this amplifier circuit. The effects of varying different parameters such as load resistance, poling voltage, and input voltages of the amplifier circuit are examined. Differences between the MFSFET and MOSFET common-drain amplifier configurations are explored in-depth.