Nicholas A. Lanzillo

Ab Initio evaluation of electron transport properties of Pt, Rh, Ir, and Pd nanowires for advanced interconnect applications

The electronic and structural properties of nanowires composed of either Pt, Ir, Rh, or Pd are calculated using density functional theory and a non-equilibrium Greens function scattering approach. The results for these nanowires are compared with Cu nanowires of comparable dimensions and evaluated for potential use in interconnect technology applications. The cohesive energies of the Pt, Rh and Ir nanowires are found to be stronger than the corresponding value for bulk Cu, indicating superior structural integrity and resistance to electromigration relative to Cu. Several of the nanowires considered are found to exhibit larger values of ballistic conductance relative to Cu, with maximum conductance occurring along the [110] crystallographic direction. Electron scattering at some representative twin grain boundaries is evaluated and an empirical resistivity model is used to quantitatively estimate the impact of grain size on total resistivity.

Electronic and structural analysis of ultra-small-diameter metal disilicide nanowires

This work describes an ab initio study of the electronic structure, electron transport, and energetic properties of cobalt disilicide (CoSi2) and nickel disilicide (NiSi2) nanowires with widths ranging from approximately 0.5 to 2.5u2009nm using density functional theory. The effects of oxidation on the nanowire surface are considered and are found to reduce the ballistic conductance by approximately 27% for both species considered. The cohesive energies for both the bulk species as well as the nanowires are found to be significantly stronger than for copper, indicating excellent structural stability. While the lower limit of electrical resistance calculated via the ballistic conductance is still significantly larger than that of Cu nanowires of comparable dimensions, the strong intrinsic lattice energy of the disilicide nanowires suggests that they can be fabricated without the need for diffusion barriers and will exhibit superior resistance to self-diffusion and electromigration.

First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance

The metal–semiconductor interface is fundamental to any semiconductor device and the success of advanced technology nodes critically depends upon the minimization of the contact resistance at the interface. In this paper, we calculate the electronic structure of a metal–semiconductor interface (TiGe/Ge contact) within the framework of first-principles density functional theory simulations. We report the modulation of the Schottky barrier height with respect to the different phases of TiGe metal and different crystallographic orientations of Ge substrate. We further compute the <inline-formula> <tex-math notation=LaTeX>

Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study

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Electron scattering at interfaces in nano-scale vertical interconnects: A combined experimental and ab initio study

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A first-principles analysis of ballistic conductance, grain boundary scattering and vertical resistance in aluminum interconnects

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Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL

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Impact of Liner Metals on Copper Resistivity at Beyond 7nm Dimensions

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Impact of Line and Via Resistance on Device Performance at the 5nm Gate All Around Node and Beyond

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Validity and Application of the TCR Method to MOL contactS

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