Nicolas Sousbie

X-ray scattering study of hydrogen implantation in silicon

The effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile from the scattering data is described. A comparison between different crystallographic orientation of the implanted silicon surface is then presented, namely, for ⟨100⟩, ⟨110⟩, and ⟨111⟩ orientations, showing a dependence that can be related to bond orientation. Effect of annealing on the stressed structure is finally described.

Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range

We investigate the mechanism of the Si layer transfer in the Smart Cut™ technology for H and He coimplantation in the dose range of (2.5–5)×1016cm−2. Using infrared spectroscopy and cross-section transmission electron microscopy we study the microstructure of defects formed in Si in the as-implanted state. With H preimplant we observe significant enhancement of damage production as compared to the case where He is implanted first. At higher coimplant doses a buried nonuniform amorphouslike layer is formed. The structure of the layer resembles “swiss cheese” with highly damaged but still crystalline pockets embedded into amorphous material. The effect of coimplantation parameters on the thickness and crystal quality of transferred layer is discussed in the framework of a simple phenomenological model.

The effect of order and dose of H and He sequential implantation on defect formation and evolution in silicon

In this paper we study the effect of the order and dose of H and He sequential implantation on H interaction with Si lattice defects. We use systematic infrared absorption measurements to investigate the evolution of hydrogenated point defects complexes during isothermal annealing. This analysis combined with the electron microscopy data led to the identification of the infrared absorption modes corresponding to the formation of the partially amorphized layer. The obtained results provide an important input for the optimization of the implantation conditions in order to achieve fracture in Si in the wide temperature range.