P. Studenkov

An asymmetric twin-waveguide high-bandwidth photodiode using a lateral taper coupler

We describe a high-bandwidth high-responsivity low-polarization sensitivity p-i-n photodiode based on an integratable asymmetric twin-waveguide structure. Incident light is collected by a diluted large-fiber guide followed by transfer to a thin-coupling waveguide using a low-loss lateral-taper coupler. The light is finally absorbed by the uppermost In/sub 0.53/Ga/sub 0.47/As layer. The device has a responsivity of (0.75/spl plusmn/0.03) ampere per watt and a polarization sensitivity of /spl les/0.4 dB. The measured electrical 3 dB bandwidth is /spl ges/40 GHz. The responsivity is comparable with the best 40-GHz waveguide p-type-intrinsic-n-type photodiodes, while the twin-waveguide design provides a single-epitaxial growth step and a simple means of fabrication with possibility for monolithic integration of the photodiodes with other optical components, such as semiconductor optical amplifiers and in-plane waveguide filters.

Current Status of Large-Scale InP Photonic Integrated Circuits

In this paper, the current state of the art for large-scale InP photonic integrated circuits (PICs) is reviewed with a focus on the devices and technologies that are driving the commercial scaling of highly integrated devices. Specifically, the performance, reliability, and manufacturability of commercial 100-Gb/s dense wavelength-division-multiplexed transmitter and receiver PICs are reviewed as well as next- and future-generation devices (500 Gb/s and beyond). The large-scale PIC enables significant reductions in cost, packaging complexity, size, fiber coupling, and power consumption which have enabled benefits at the component and system level.

High-power high-efficiency 0.98-/spl mu/m wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

We describe the design and experimental results for high-power, high-efficiency, low threshold current, 0.98-/spl mu/m wavelength, broadened waveguide (BW) aluminum-free InGaAs-(In)GaAs(P)-InGaP lasers. The decrease in the internal losses with an increase in the width of the waveguide layer for a separate-confinement heterostructure multiple-quantum-well (SCW-MQW) structure is attributed to lower free-carrier absorption due to the reduced overlap of the optical mode with the highly doped cladding regions. The BW lasers grown with both InGaAsP and GaAs waveguides show lower internal losses and similar threshold currents than those designed for an optimum optical confinement factor within the QW region. We report a record-low internal loss of 1.8/spl plusmn/0.2 cm/sup -2/ for (In)GaAs(P)-InGaP lasers grown by gas-source molecular beam epitaxy (GSMBE). The temperature dependence of internal loss suggests that optical loss from free-carrier absorption in the waveguide dominates at T>40/spl deg/C, while near room temperature, the residual loss is attributed to scattering and free-carrier absorption in the QWs. The relative insensitivity of internal loss near room temperature has enabled the use of a simplified InGaAs-GaAs-InGaP BW structure to achieve very high CW and quasi-CW (QCW) power operation. We report the highest CW output power of 6.8 W for a GaAs-InGaP laser, and the highest quasi-continuous output power of 13.3 W measured for a single 100-/spl mu/m-wide aperture, 0.8-0.98-/spl mu/m wavelength Al-free laser diode grown by GSMBE.

Large-Scale InP Transmitter PICs for PM-DQPSK Fiber Transmission Systems

We report here the first demonstration of a large-scale monolithically integrated InP-based 10-channel 45.6-Gb/s per channel transmitter photonic integrated circuit employing polarization-multiplexed differential quadrature phase-shift keying modulation format.

Multi-channel coherent PM-QPSK InP transmitter photonic integrated circuit (PIC) operating at 112 Gb/s per wavelength

A 10-wavelength, polarization-multiplexed, monolithically integrated InP transmitter PIC is demonstrated for the first time to operate at 112 Gb/s per wavelength with a coherent receiver PIC.

1.12 Tb/s superchannel coherent PM-QPSK InP transmitter photonic integrated circuit (PIC)

In this work, a 10-wavelength, polarization-multiplexed, monolithically integrated InP coherent QPSK transmitter PIC is demonstrated to operate at 112 Gb/sec per wavelength and total chip superchannel bandwidth of 1.12 Tb/s. This demonstration suggests that increasing data capacity to multi-Tb/s per chip is possible and likely in the future.

Large-Scale Photonic Integrated Circuit Transmitters with Monolithically Integrated Semiconductor Optical Amplifiers

We have successfully demonstrated large-scale photonic integrated circuit (LS-PIC) transmitters with monolithically integrated semiconductor optical amplifiers. Data is presented for for 10 channel devices operating at 10 and 40 Gb/sec.

Large-scale Monolithic Integration Enabling Terabit Transmitters and Coherent Super-channel Architecture

In this talk, we review InP-based, 10 wavelength, polarization-multiplexed quadrature phase-shift keying (PM-QPSK) transmitter and receiver photonic integrated circuits (PICs) that enable terabit coherent super-channel architecture.

Large-scale photonic integrated circuits

100-Gb/s dense wavelength division multiplexed (DWDM) transmitter and receiver photonic integrated circuits (PICs) are demonstrated. The transmitter is realized through the integration of over 50 discrete functions onto a single monolithic InP chip. The resultant DWDM PICs are capable of simultaneously transmitting and receiving ten wavelengths at 10 Gb/s on a DWDM wavelength grid. Optical system performance results across a representative DWDM long-haul link are presented for a next-generation optical transport system using these large-scale PICs. The large-scale PIC enables significant reductions in cost, packaging complexity, size, fiber coupling, and power consumption.

Current view of large scale photonic integrated circuits on indium phosphide

We report on the current state of large-scale and high functionality photonic integrated circuits on the InP platform for transmitters, receivers, and other device applications.