Philip K. T. Mok

A monolithic current-mode CMOS DC-DC converter with on-chip current-sensing technique

A monolithic current-mode CMOS DC-DC converter with integrated power switches and a novel on-chip current sensor for feedback control is presented in this paper. With the proposed accurate on-chip current sensor, the sensed inductor current, combined with the internal ramp signal, can be used for current-mode DC-DC converter feedback control. In addition, no external components and no extra I/O pins are needed for the current-mode controller. The DC-DC converter has been fabricated with a standard 0.6-/spl mu/m CMOS process. The measured absolute error between the sensed signal and the inductor current is less than 4%. Experimental results show that this converter with on-chip current sensor can operate from 300 kHz to 1 MHz with supply voltage from 3 to 5.2 V, which is suitable for single-cell lithium-ion battery supply applications. The output ripple voltage is about 20 mV with a 10-/spl mu/F off-chip capacitor and 4.7-/spl mu/H off-chip inductor. The power efficiency is over 80% for load current from 50 to 450 mA.

A capacitor-free CMOS low-dropout regulator with damping-factor-control frequency compensation

A 1.5-V 100-mA capacitor-free CMOS low-dropout regulator (LDO) for system-on-chip applications to reduce board space and external pins is presented. By utilizing damping-factor-control frequency compensation on the advanced LDO structure, the proposed LDO provides high stability, as well as fast line and load transient responses, even in capacitor-free operation. The proposed LDO has been implemented in a commercial 0.6-/spl mu/m CMOS technology, and the active chip area is 568 /spl mu/m/spl times/541 /spl mu/m. The total error of the output voltage due to line and load variations is less than /spl plusmn/0.25%, and the temperature coefficient is 38 ppm//spl deg/C. Moreover, the output voltage can recover within 2 /spl mu/s for full load-current changes. The power-supply rejection ratio at 1 MHz is -30 dB, and the output noise spectral densities at 100 Hz and 100 kHz are 1.8 and 0.38 /spl mu/V//spl radic/Hz, respectively.

Single-inductor multiple-output switching converters with time-multiplexing control in discontinuous conduction mode

An integrated single-inductor dual-output boost converter is presented. This converter adopts time-multiplexing control in providing two independent supply voltages (3.0 and 3.6 V) using only one 1-/spl mu/H off-chip inductor and a single control loop. This converter is analyzed and compared with existing counterparts in the aspects of integration, architecture, control scheme, and system stability. Implementation of the power stage, the controller, and the peripheral functional blocks is discussed. The design was fabricated with a standard 0.5-/spl mu/m CMOS n-well process. At an oscillator frequency of 1 MHz, the power conversion efficiency reaches 88.4% at a total output power of 350 mW. This topology can be extended to have multiple outputs and can be applied to buck, flyback, and other kinds of converters.

Active-feedback frequency-compensation technique for low-power multistage amplifiers

An active-feedback frequency-compensation (AFFC) technique for low-power operational amplifiers is presented in this paper. With an active-feedback mechanism, a high-speed block separates the low-frequency high-gain path and high-frequency signal path such that high gain and wide bandwidth can be achieved simultaneously in the AFFC amplifier. The gain stage in the active-feedback network also reduces the size of the compensation capacitors such that the overall chip area of the amplifier becomes smaller and the slew rate is improved. Furthermore, the presence of a left-half-plane zero in the proposed AFFC topology improves the stability and settling behavior of the amplifier. Three-stage amplifiers based on AFFC and nested-Miller compensation (NMC) techniques have been implemented by a commercial 0.8-/spl mu/m CMOS process. When driving a 120-pF capacitive load, the AFFC amplifier achieves over 100-dB dc gain, 4.5-MHz gain-bandwidth product (GBW) , 65/spl deg/ phase margin, and 1.5-V//spl mu/s average slew rate, while only dissipating 400-/spl mu/W power at a 2-V supply. Compared to a three-stage NMC amplifier, the proposed AFFC amplifier provides improvement in both the GBW and slew rate by 11 times and reduces the chip area by 2.3 times without significant increase in the power consumption.

Three-stage large capacitive load amplifier with damping-factor-control frequency compensation

A novel damping-factor-control frequency compensation (DFCFC) technique is presented in this paper with detailed theoretical analysis, This compensation technique improves frequency response, transient response, and power supply rejection for amplifiers, especially when driving large capacitive loads, Moreover, the required compensation capacitors are small and can be easily integrated in commercial CMOS process. Amplifiers using DFCPC and nested Miller compensation (NMC) driving two capacitive loads, 100 and 1000 pF, were fabricated using a 0.8-/spl mu/m CMOS process with V/sub tn/=0.72 V and V/sub tp/=-0.75 V. For the DFCFC amplifier driving a 1000-pF load, a 1-MHz gain-bandwidth product, 51/spl deg/ phase margin, 0.33-V//spl mu/s slew rate, 3.54-/spl mu/s settling time, and 426-/spl mu/W power consumption are obtained with integrated compensation capacitors. Compared to the NMC amplifier, the frequency and transient responses of the DFCFC amplifier are improved by one order of magnitude with insignificant increase of the power consumption.

A CMOS voltage reference based on weighted /spl Delta/V/sub GS/ for CMOS low-dropout linear regulators

A CMOS voltage reference, which is based on the weighted difference of the gate-source voltages of an NMOST and a PMOST operating in saturation region, is presented. The voltage reference is designed for CMOS low-dropout linear regulators and has been implemented in a standard 0.6-/spl mu/m CMOS technology (V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0/spl deg/C). The occupied chip area is 0.055 mm/sup 2/. The minimum supply voltage is 1.4 V, and the maximum supply current is 9.7 /spl mu/A. A typical mean uncalibrated temperature coefficient of 36.9 ppm//spl deg/C is achieved, and the typical mean line regulation is /spl plusmn/0.083%/V. The power-supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz are -47 and -20 dB, respectively. Moreover, the measured noise density with a 100-nF filtering capacitor at 100 Hz is 152 nV//spl radic/(Hz) and that at 100 kHz is 1.6 nV//spl radic/(Hz).

A 2-V 23-/spl mu/A 5.3-ppm//spl deg/C curvature-compensated CMOS bandgap voltage reference

A high-order curvature-compensated CMOS bandgap reference, which utilizes a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Implemented in a standard 0.6-/spl mu/m CMOS technology with V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0/spl deg/C, the proposed voltage reference can operate down to a 2-V supply and consumes a maximum supply current of 23 /spl mu/A. A temperature coefficient of 5.3 ppm//spl deg/C at a 2-V supply and a line regulation of /spl plusmn/1.43 mV/V at 27/spl deg/C are achieved. Experimental results show that the temperature drift is reduced by approximately five times when compared with a conventional bandgap reference in the same technology.

A novel ultrathin elevated channel low-temperature poly-Si TFT

A novel ultrathin elevated channel thin-film transistor (UT-ECTFT) made using low-temperature poly-Si is proposed. The structure has an ultrathin channel region (300 /spl Aring/) and a thick drain/source region. The thin channel is connected to the heavily doped drain/source through a lightly doped overlapped region. The lightly doped overlapped region provides an effective way to spread out the electric field at the drain, thereby reducing significantly the lateral electric field there at high drain bias. Thus, the UT-ECTFT exhibits excellent current saturation characteristics even at high bias (V/sub ds/=30 V, V/sub gs/=20 V). Moreover, the UT-ECTFT has more than two times increase in on-state current and 3.5 times reduction in off-state current compared to conventional thick channel TFTs.

A Low-Dropout Regulator for SoC With

A low-dropout regulator for SoC, with an advanced Q-reduction circuit to minimize both the on-chip capacitance and the minimum output-current requirement down to 100 muA, is introduced in this paper. The idea has been implemented in a standard 0.35-mum CMOS technology (VTHN ap 0.55 V and |VTHP| ap 0.75 V). The required on-chip capacitance is reduced to 6 pF, comparing to 25 pF for the case without Q-reduction circuit. From the experimental results, the proposed regulator-circuit implementation enables voltage regulation down to a 1.2-V supply voltage, and a dropout voltage of 200 mV at 100-mA maximum output current.

Q

A high slew-rate amplifier with push-pull output driving capability is proposed to enable an ultra-low quiescent current (Iq ~ 1muA) low-dropout (LDO) regulator with improved transient responses. The proposed amplifier eliminates the tradeoff between small Iq and large slew-rate that is imposed by the tail-current in conventional amplifier design. Push-pull output stage is introduced to enhance the output driving ability. Small dropout voltage (Vbo) with large-size pass transistor and ultra-low Iq can thus be used to minimize power loss of LDO regulator without transient-response degradation. The proposed amplifier helps to improve stability of LDO regulators without using any on-chip and off-chip compensation capacitors. This is beneficial to chip-level power management requiring high-area efficiency. An LDO regulator with the proposed amplifier has been implemented in a 0.18- mum standard CMOS process and occupies 0.09 mm2. The LDO regulator can deliver 50-mA load current at 1-V input and ~ 100-mV VDO . It only consumes 1.2 muA Iq and is able to recover within ~ 4 mus even under the worst case scenario.