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Dive into the research topics where Pierre Maillard is active.

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Featured researches published by Pierre Maillard.


radiation effects data workshop | 2015

Neutron, 64 MeV Proton, Thermal Neutron and Alpha Single-Event Upset Characterization of Xilinx 20nm UltraScale Kintex FPGA

Pierre Maillard; Michael J. Hart; Jeff Barton; Praful Jain; James Karp

The single-event response of Xilinx 20nm UltraScale Kintex FPGA is characterized using neutron, 64 MeV proton, thermal neutron and alpha foil irradiation sources. Single-event upset and multi-bits upset results are presented.


radiation effects data workshop | 2015

Impact of Temperature and Vcc Variation on 20nm Kintex UltraScale FPGAs Neutron Soft Error Rate

Pierre Maillard; Michael J. Hart; Jeff Barton; Praful Jain; James Karp

The single-event response vs. temperature and Vcc supply voltage of the 20nm Kintex UltraScale FPGA is characterized using a 64 MeV proton beam as proxy for atmospheric neutron. Single-event upset and multi-bit upset results are presented.


radiation effects data workshop | 2017

64 MeV proton single-event upset characterization of customer memory interface design on Xilinx XCKU040 FPGA

Yanran P. Chen; Pierre Maillard; Michael J. Hart; Jeff Barton; John Schmitz; Patrick Kyu

This paper examines the single-event upset response of a customer memory interface design on the Xilinx 20nm XCKU040 Field Programmable Gate Array (FPGA) irradiated with 64MeV proton source. Results for single-event upsets on configuration RAM (CRAM) cells are provided. The difference between architectural vulnerability factor (AVF) and design vulnerability factor (DVF) of the customer memory interface design is also discussed in this work.


radiation effects data workshop | 2017

Neutron, 64 MeV proton & alpha single-event characterization of Xilinx 16nm FinFET Zynq® UltraScale+™ MPSoC

Pierre Maillard; Michael J. Hart; Jeff Barton; Jue Arver; Christina Smith

This paper examines the single-event effect response of the Xilinx 16nm FinFET XCZU9EG Zynq® MPSoC irradiated with neutrons, 64 MeV protons and thermal neutrons sources. A 16nm FPGA-like test chip was also built for alpha foil testing. Results for single-event upsets on configuration RAM (CRAM) cells and block RAM (bRAM) cells are provided for the programmable logic. In addition, the 1st· Xilinx 16nm FinFET processor (PS) SEE results are also presented.


Archive | 2015

Single-event upset mitigation in circuit design for programmable integrated circuits

Praful Jain; Pierre Maillard


Archive | 2014

Integrated circuit package with thermal neutron shielding

Pierre Maillard; Jeffrey Barton; Austin H. Lesea


Archive | 2014

Master-slave flip-flops and methods of implementing master-slave flip-flops in an integrated circuit

Pierre Maillard; Praful Jain; Michael J. Hart; Sundeep Ram Gopal Agarwal; Austin H. Lesea; Jun Liu


IEEE Transactions on Nuclear Science | 2018

Single-Event Latch-Up: Increased Sensitivity From Planar to FinFET

James Karp; Michael J. Hart; Pierre Maillard; Geert Hellings; Dimitri Linten


Archive | 2017

Circuit for and method of preventing multi-bit upsets induced by single event transients

Pierre Maillard; Michael J. Hart; Praful Jain; Robert I. Fu


Archive | 2017

Mitigation of single event latchup

Pierre Maillard; Jue Arver; Michael J. Hart; John K. Jennings

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