Quoc Ngo

Thermal Contact Resistance and Thermal Conductivity of a Carbon Nanofiber

It has been suggested that CNTs and carbon nanofibers CNFs can be used as thermal interface materials to enhance contact thermal conductance for electronic packaging applications. Several groups have reported mixed experimental results from no improvements to large improvements in the thermal contact conductance due to the CNTs and CNFs 8‐12. These mixed results can be caused by the difference in surface coverage and perpendicular alignment of the CNTs or CNFs. Moreover, the results can be affected by two other factors. First, the CNTs and CNFs grown using different methods possess different defect densities and different intrinsic thermal conductivities. Secondly, the contact thermal resistance of the nanometer scale point and line contacts between a CNT or CNF and a planar surface can be high due to enhanced phonon-boundary scattering at the nanocontacts. We have used a microfabricated device to measure the thermal resistance of an individual CNF from a vertically aligned CNF film for applications as thermal interface materials. The measurement was conducted before and after a platinum Pt layer was deposited on the contacts between the CNF and the microdevice so as to investigate the thermal contact resistance between the CNF and a planar surface. The contact resistance was reduced by the platinum coating for about 9‐13% of the total thermal resistance of the nanofiber sample before the Pt coating. At temperature 300 K, the obtained axial thermal conductivity of the carbon nanofibers was about three times smaller than that of graphite fibers grown by pyrolysis of natural gas prior to high-temperature heat treatment.

Electron transport through metal-multiwall carbon nanotube interfaces

In this paper, we examine mechanisms of electron transport across the metal-carbon nanotube (CNT) interface for two different types of multiwall carbon nanotube (MWNT) architectures, horizontal or side-contacted MWNTs and vertical or end-contacted MWNTs. Horizontally aligned nanotube growth and electrical characteristics are examined with respect to their potential applications in silicon-based technologies. Recent advances in the synthesis techniques of vertical MWNTs have also enhanced the possibility for a manufacturable solution incorporating this novel material as on-chip interconnects or vias as copper interconnect feature sizes are scaled into the sub-100-nm regime. A vertical MWNT architecture is presented that may be suitable for integration into silicon-based technologies. The growth method for this architecture and its effect on electrical characteristics are examined. Through simulations, dc measurements, and comparison of our results with previous studies, we explain why high contact resistance is observed in metal-CNT-metal systems.

Structural and Electrical Characterization of Carbon Nanofibers for Interconnect Via Applications

We present temperature-dependent electrical characteristics of vertically aligned carbon nanofiber (CNF) arrays for on-chip interconnect applications. The study consists of three parts. First, the electron transport mechanisms in these structures are investigated using I-V measurements over a broad temperature range (4.4 K to 350 K). The measured resistivity in CNF arrays is modeled based on known graphite two-dimensional hopping electron conduction mechanism. The model is used because of the disordered graphite structure observed during high-resolution scanning transmission electron microscopy (STEM) of the CNF and CNF-metal interface. Second, electrical reliability measurements are performed at different temperatures to demonstrate the robust nature of CNFs for interconnect applications. Finally, some guidance in catalyst material selection is presented to improve the nanostructure of CNFs, making the morphology similar to multiwall nanotubes.

Characteristics of aligned carbon nanofibers for interconnect via applications

Electrical properties of plasma-enhanced chemical vapor deposited carbon nanofibers (CNFs) are characterized with measurements over a broad temperature range (4-300 K). Temperature-dependent measurements of CNF via resistivity reveal a behavior resembling the mixture of graphite a-axis and c-axis transport mechanisms. For the first time, temperature-dependent characteristics of CNFs are measured and modeled based on previously developed models for electron conduction in graphite. Reliability measurements are performed to demonstrate the robust electrical and thermal properties of CNF vias for next-generation on-chip-interconnect designs.

Current-induced breakdown of carbon nanofibers

We present a study of high-field transport in carbon nanofibers (CNFs) and breakdown phenomena due to current stress. In situ measurements with scanning transmission electron microscopy reveal that the failure mode of CNFs is strongly related to the morphology of graphite layers comprising CNFs. Comparison with carbon nanotube (CNT) breakdown is made, demonstrating that the current capacity of CNFs is described by a similar model as that of CNTs with a modification of the current capacity of each graphitic layer. The maximum current density is correlated with resistivity, leading to the conclusion that lower resistivity results in higher current capacity in CNFs.

Structural characteristics of carbon nanofibers for on-chip interconnect applications

In this letter, we compare the structures of plasma-enhanced chemical vapor deposition of Ni-catalyzed and Pd-catalyzed carbon nanofibers (CNFs) synthesized for on-chip interconnect applications with scanning transmission electron microscopy (STEM). The Ni-catalyzed CNF has a conventional fiberlike structure and many graphitic layers that are almost parallel to the substrate at the CNF base. In contrast, the Pd-catalyzed CNF has a multiwall nanotubelike structure on the sidewall spanning the entire CNF. The microstructure observed in the Pd-catalyzed fibers at the CNF-metal interface has the potential to lower contact resistance significantly, as our electrical measurements using current-sensing atomic force microscopy indicate. A structural model is presented based on STEM image analysis.

Corrections to "Characteristics of Aligned Carbon Nanofibers for Interconnect Via Applications"

Electrical properties of plasma-enhanced chemical vapor deposited carbon nanofibers (CNFs) are characterized with measurements over a broad temperature range (4-300 K). Temperature-dependent measurements of CNF via resistivity reveal a behavior resembling the mixture of graphite a-axis and c-axis transport mechanisms. For the first time, temperature-dependent characteristics of CNFs are measured and modeled based on previously developed models for electron conduction in graphite. Reliability measurements are performed to demonstrate the robust electrical and thermal properties of CNF vias for next-generation on-chip-interconnect designs.

Electrical conduction of carbon nanotube atomic force microscopy tips: Applications in nanofabrication

This paper reports the electrical transport properties of the interface of a multiwalled carbon nanotube (MWNT) in physical end contact with a hydrogen-passivated Si surface and a Pt surface. The electrical measurement was performed in an atomic force microscope (AFM) with a MWNT attached to a scanning probe in contact mode at approximately 50% relative humidity. AFM force-distance spectroscopy was employed to set the degree of contact between the MWNT tip with the surface. The tip-substrate interface dominates the electrical measurement in this configuration, showing electrical conductivity characteristics indicative of the tip-substrate junction. MWNT tips in contact with a Pt surface exhibit a linear I-V behavior with electrical resistances in the range of 30–50kΩ, demonstrating the metallic nature of the MWNT. Results are presented for the investigation of the current-induced joule heating limitations of MWNT tips under ambient conditions. Thinning of the outer walls through a current-induced thermal ...

Thermal Conductivity of Carbon Nanotube Composite Films

State-of-the-art ICs for microprocessors routinely dissipate power densities on the order of 50 W/cm 2 . This large power is due to the localized heating of ICs operating at high frequencies, and must be managed for future high-frequency microelectronic applications. Our approach involves finding new and efficient thermally conductive materials. Exploiting carbon nanotube (CNT) films and composites for their superior axial thermal conductance properties has the potential for such an application requiring efficient heat transfer. In this work, we present thermal contact resistance measurement results for CNT and CNT-Cu composite films. It is shown that Cu-filled CNT arrays enhance thermal conductance when compared to as-grown CNT arrays. Furthermore, the CNT-Cu composite material provides a mechanically robust alternative to current IC packaging technology.

Interface characteristics of vertically aligned carbon nanofibers for interconnect applications

The authors characterize the detailed interface structure of Ni-catalyzed vertically aligned carbon nanofibers (CNFs) prepared by plasma-enhanced chemical vapor deposition for interconnect applications. Stacked graphitic layers and cup-shape structures of CNFs around the interface region have been observed using high-resolution scanning transmission electron microscopy. The interaction between the Ni catalyst and Ti layer dramatically affects the CNF structure during initial growth. The effect of interface nanostructures on contact resistance is also discussed.