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Ralf Henninger

Infineon Technologies

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Publication

Featured researches published by Ralf Henninger.

Archive | 2003

Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration

Ralf Henninger; Franz Hirler; Joachim Krumrey; Walter Rieger; Martin Pölzl; Heimo Hofer

Archive | 2003

Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance

Ralf Henninger; Franz Hirler; Joachim Krumrey; Walter Rieger; Martin Poelzl

Archive | 2003

Semiconductor component with an increased breakdown voltage in the edge area

Ralf Henninger; Franz Hirler; Joachim Krumrey; Markus Zundel; Walter Rieger; Martin Pölzl

Archive | 2002

Trench power semiconductor

Ralf Henninger; Franz Hirler; Manfred Kotek; Joost Larik; Markus Zundel

Archive | 2004

Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone

Franz Hirler; Ralf Henninger; Frank Pfirsch; Markus Zundel; Jenoe Tihanyi

Archive | 2008

Lateral semiconductor component with a drift zone having at least one field electrode

Franz Hirler; Armin Willmeroth; Markus Schmitt; Carolin Tolksdorf; Uwe Wahl; Gerald Deboy; Ralf Henninger

Archive | 2003

Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell

Joachim Krumrey; Franz Hirler; Ralf Henninger; Martin Pölzl; Walter Rieger

Archive | 2002

Verfahren zur Herstellung einer Transistoranordnung mit Trench-Transistorzellen mit Feldelektrode

Ralf Henninger; Franz Hirler; Joachim Krumrey; Walter Rieger; Martin Poelzl; Heimo Hofer

Archive | 2005

Vertikales Halbleiterbauelement mit einer eine Feldelektrode aufweisenden Driftzone und Verfahren zur Herstellung einer solchen Driftzone

Franz Hirler; Frank Pfirsch; Ralf Henninger; Markus Zundel; Jenö Tihanyi

Archive | 2002

Production of a transistor arrangement comprises inserting a trench in a process layer of a semiconductor substrate, and forming a drift zone, a channel zone and a source zone in the process zone

Ralf Henninger; Franz Hirler; Joachim Krumrey; Walter Rieger; Martin Poelzl; Heimo Hofer

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Franz Hirler

Infineon Technologies

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Walter Rieger

Infineon Technologies

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Joachim Krumrey

Infineon Technologies

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Markus Zundel

Infineon Technologies

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Martin Pölzl

Infineon Technologies

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Martin Poelzl

Infineon Technologies

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Frank Pfirsch

Infineon Technologies

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Heimo Hofer

Infineon Technologies

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Jan Ropohl

Infineon Technologies

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Jenoe Tihanyi

Siemens

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