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Rinji Sugino

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international electron devices meeting | 2006

A Formation of Si Native Oxide Membrane Using High-Selectivity Etching and Applications for Nano-Pipe Array and Micro-Diaphragm on Si Substrate

Rinji Sugino; Takashi Ito

A novel technique in creating a cavity by using a membrane of Si-native oxide has been developed. The membrane of Si-native oxide was formed by high-selectivity Cl2 etching of Si which surface was treated by wet chemicals. Following film deposition onto the membrane which was supported by SiO2 mask can make a cavity in the substrate. The advantage of this technique is its ability to maintain the CD of cavity even after film deposition to seal the via-opening

Archive | 2008

METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SEMICIRCULAR TOP SURFACES AND ROUNDED TOP CORNERS AND EDGES

Inkuk Kang; Gang Xue; Shenqing Fang; Rinji Sugino; Yi Ma

Archive | 2003

Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device

Arvind Halliyal; Fred T K Cheung; Rinji Sugino; Hidehiko Shiraiwa; Tazrien Kamal; Jean Y. Yang

Archive | 2003

ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices

Hidehiko Shiraiwa; Tazrien Kamal; Mark T. Ramsbey; Inkuk Kang; Jaeyong Park; Rinji Sugino; Jean Y. Yang; Fred T K Cheung; Arvind Halliyal; Amir H. Jafarpour

Archive | 2003

Structure and method for preventing UV radiation damage and increasing data retention in memory cells

Angela Hui; Minh V. Ngo; Ning Cheng; Jaeyong Park; Jean Y. Yang; Hidehiko Shiraiwa; Rinji Sugino; Tazrien Kamal; Cinti X. Chen

Archive | 2007

Dual charge storage node with undercut gate oxide for deep sub-micron memory cell

Chungho Lee; Hiroyuki Kinoshita; Zoran Krivokapic; Wei Zheng; Mark S. Chang; Rinji Sugino; Chi Chang

Archive | 2003

Method of manufacturing a semiconductor memory with deuterated materials

Tazrien Kamal; Arvind Halliyal; Minh Van Ngo; Mark T. Ramsbey; Jean Y. Yang; Hidehiko Shiraiwa; Rinji Sugino

Archive | 2003

Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device

Tazrien Kamal; Yun Wu; Mark T. Ramsbey; Jean Yee-Mei Yang; Arvind Halliyal; Rinji Sugino; Hidehiko Shiraiwa; Fred Cheung

Archive | 2002

Liner for semiconductor memories and manufacturing method therefor

Minh Van Ngo; Arvind Halliyal; Tazrien Kamal; Hidehiko Shiraiwa; Rinji Sugino; Dawn M. Hopper; Pei-Yuan Gao

Archive | 2008

USE OF SILICON-RICH NITRIDE IN A FLASH MEMORY DEVICE

YouSeok Suh; Shenqing Fang; Kuo Tung Chang; Rinji Sugino; Yi Ma; Eunha Kim

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Hidehiko Shiraiwa

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Arvind Halliyal

Advanced Micro Devices

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Tazrien Kamal

Advanced Micro Devices

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Minh Van Ngo

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Shenqing Fang

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Jean Y. Yang

Advanced Micro Devices

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Kuo-Tung Chang

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Yi Ma

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Jaeyong Park

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Jean Yee-Mei Yang

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