Robert B. Davies

High-voltage termination using enhanced surface doping

A new technique using enhanced surface doping on the lightly-doped side of a p-n junction has been developed. The basic structure comprises a series of field-limiting rings lying in a high-resistivity region whose surface doping has been substantially enhanced. Capacitively-coupled floating field plates serve to reduce sensitivity to stray external charges. The enhanced surface doping serves to increase and control the punch- through voltage between the rings, thereby increasing the surface volts per micron obtainable versus standard ring terminations.

A packaged MOS power device with an integral protection chip

A packaged MOS power device having a protective integrated circuit mounted on the gate lead of the package is described. The protective circuit prevents gate overvoltage and provides for rapid gate discharge during commutation, overtemperature, or overvoltage in the on-state.<<ETX>>