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Ryozo Nakayama

Toshiba

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Publication

Featured researches published by Ryozo Nakayama.

Archive | 1988

Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation

Masaki Momodomi; Riichiro Shirota; Yasuo Itoh; Satoshi Inoue; Fujio Masuoka; Ryozo Nakayama; Ryouhei Kirisawa

Archive | 1994

Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through

Masaki Momodomi; Fujio Masuoka; Yasuo Itoh; Hiroshi Iwahashi; Yoshihisa Iwata; Masahiko Chiba; Satoshi Inoue; Riichiro Shirota; Ryozo Nakayama; Kazunori Ohuchi; Shigeyoshi Watanabe; Ryouhei Kirisawa

Archive | 1992

Non-volatile semiconductor memory device with voltage stabilizing electrode

Ryozo Nakayama; Riichiro Shirota; Yasuo Itoh; Ryouhei Kirisawa; Hideko Odaira; Masaki Momodomi; Yoshihisa Iwata; Tomoharu Tanaka; Seiichi Aritome; Tetsuo Endoh; Fujio Masuoka

Archive | 1991

Non-volatile semiconductor memory device with nand type memory cell arrays

Ryouhei Kirisawa; Riichiro Shirota; Ryozo Nakayama; Seichi Intellectual Pr. Aritome; Masaki Momodomi; Yasuo Itoh; Fujio Masuoka

Archive | 1991

Process for forming arrayed field effect transistors highly integrated on substrate

Riichiro Shirota; Masaki Momodomi; Ryozo Nakayama; Seiichi Aritome; Ryouhei Kirisawa; Tetsuro Kikuna Endoh; Shigeyoshi Watanabe

Archive | 1988

Non-volatile semiconductor memory with NAND cell structure

Masaki Momodomi; Fujio Masuoka; Yasuo Itoh; Hiroshi Iwahashi; Yoshihisa Iwata; Masahiko Chiba; Satoshi Inoue; Riichiro Shirota; Ryozo Nakayama; Kazunori Ohuchi; Shigeyoshi Watanabe; Ryouhei Kirisawa

Archive | 1988

Nichtflüchtige programmierbare Halbleiter-Speicheranordnung und Verfahren zum Löschen einer solchen Speicheranordnung

Masaki Momodomi; Riichiro Shirota; Yasuo Itoh; Satoshi Inoue; Fujio Masuoka; Ryozo Nakayama; Ryouhei Kirisawa

Archive | 1994

Method of manufacturing NAND type EEPROM

Masamichi Asano; Hiroshi Iwahashi; Ryouhei Kirisawa; Ryozo Nakayama; Satoshi Inoue; Riichiro Shirota; Tetsuo Endoh; Fujio Masuoka

Archive | 1991

Verfahren zur Herstellung von zueinander parallel ausgerichteten Leiterschichtabschnitten Process for the preparation of mutually parallel aligned conductor layer portions

Riichiro Shirota; Masaki Momodomi; Ryozo Nakayama; Seiichi Aritome; Ryouhei Kirisawa; Tetsuro Kikuna Endoh; Shigeyoshi Watanabe

Archive | 1991

A process for the production of mutually parallel conductor layer portions

Riichiro Shirota; Masaki Momodomi; Ryozo Nakayama; Seiichi Aritome; Ryouhei Kirisawa; Tetsuro Kikuna Endoh; Shigeyoshi Watanabe

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Riichiro Shirota

Toshiba

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Ryouhei Kirisawa

Toshiba

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Masaki Momodomi

Toshiba

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Fujio Masuoka

Tohoku University

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Yasuo Itoh

Toshiba

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Satoshi Inoue

Toshiba

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Shigeyoshi Watanabe

Toshiba

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Hiroshi Iwahashi

Toshiba

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Yoshihisa Iwata

Toshiba

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Kazunori Ohuchi

Toshiba

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