Ryouhei Kirisawa | Researchain

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international electron devices meeting | 2009

Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability

Megumi Ishiduki; Yoshiaki Fukuzumi; Ryota Katsumata; Masaru Kito; Masaru Kido; Hiroyasu Tanaka; Yosuke Komori; Y. Nagata; Tomoko Fujiwara; Takashi Maeda; Yoshimasa Mikajiri; Shigeto Oota; Makoto Honda; Yoshihisa Iwata; Ryouhei Kirisawa; Hideaki Aochi; Akihiro Nitayama

An asymmetric source/drain profile for select gate and metal salicided control gate are successfully realized on Pipe-shaped Bit Cost Scalable (P-BiCS) Flash memory to achieve data storage device with excellent performance and reliability.

symposium on vlsi technology | 2006

Pipe-shaped BiCS flash memory with 16 stacked layers and multi-level-cell operation for ultra high density storage devices

Ryota Katsumata; Masaru Kito; Yoshiaki Fukuzumi; Masaru Kido; Hiroyasu Tanaka; Yosuke Komori; Megumi Ishiduki; Junya Matsunami; Tomoko Fujiwara; Y. Nagata; Li Zhang; Yoshihisa Iwata; Ryouhei Kirisawa; Hideaki Aochi; Akihiro Nitayama

Archive | 1988

Electrically erasable programmable read-only memory with NAND cell structure

Masaki Momodomi; Fujio Masuoka; Riichiro Shirota; Yasuo Itoh; Kazunori Ohuchi; Ryouhei Kirisawa

Archive | 1994

Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels

Tetsuo Endoh; Riichiro Shirota; Kazunori Ohuchi; Ryouhei Kirisawa; Seiichi Aritome; Tomoharu Tanaka; Yoshiyuki Tanaka

Archive | 1995

Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller

Tetsuo Endoh; Riichiro Shirota; Kazunori Ohuchi; Ryouhei Kirisawa; Seiichi Aritome; Tomoharu Tanaka; Yoshiyuki Tanaka

Archive | 1994

Electrically erasable programmable read-only memory with electric field decreasing controller

Seiichi Aritome; Riichiro Shirota; Ryouhei Kirisawa; Yoshihisa Iwata; Masaki Momodomi

Archive | 1988

Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation

Masaki Momodomi; Riichiro Shirota; Yasuo Itoh; Satoshi Inoue; Fujio Masuoka; Ryozo Nakayama; Ryouhei Kirisawa

Archive | 2011

Method for operating semiconductor memory device

Yoshimasa Mikajiri; Shigeto Oota; Masaru Kito; Ryouhei Kirisawa

Archive | 2010

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

Hiroyasu Tanaka; Hideaki Aochi; Ryota Katsumata; Masaru Kidoh; Masaru Kito; Yoshiaki Fukuzumi; Yosuke Komori; Megumi Ishiduki; Tomoko Fujiwara; Junya Matsunami; Ryouhei Kirisawa

Archive | 1994

Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through

Masaki Momodomi; Fujio Masuoka; Yasuo Itoh; Hiroshi Iwahashi; Yoshihisa Iwata; Masahiko Chiba; Satoshi Inoue; Riichiro Shirota; Ryozo Nakayama; Kazunori Ohuchi; Shigeyoshi Watanabe; Ryouhei Kirisawa

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