Sangmin Shin

Liquid delivery metal-organic chemical vapor deposition of Pb(ZrxTi1-x)O3 thin films for high-density ferroelectric random access memory application

The growth characteristics of Pb(ZrxTi1-x)O3 (PZT) thin films were investigated for application to high-density ferroelectric random access memories (FeRAM) devices. Films were grown by the liquid source metal-organic chemical vapor deposition (LS-MOCVD) method with tmhd-family precursors, such as Pb(tmhd)2, Zr(tmhd)2(OiPr)2 and Ti(tmhd)2(OiPr)2, dissolved in octane. Film deposition was mainly performed at 560°C, because it is the highest temperature at which bottom electrode contact could be maintained against oxidation in our capacitor over bit-line (COB) structure. The control of Pb precursor supply plays the most critical role in realizing a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, Ir/IrO2/PZT(100 nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of ~ 28 µC/cm2 and coercive voltage of 0.8 V at 2.5 V.

Dielectric constants of Ir, Ru, Pt, and IrO 2 : Contributions from bound charges

We investigated the dielectric functions

Atomic-layer deposited IrO2 nanodots for charge-trap flash-memory devices

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Transient-current measurement of the trap charge density at interfaces of a thin-film metal∕ferroelectric∕metal structure

of Ir, Ru, Pt, and

Improvement of retention loss in Pb(Zr,Ti)O3 capacitors using Ir∕SrRuO3 top electrodes

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Fabrication of 3D trench PZT capacitors for 256Mbit FRAM device application

, which are commonly used as electrodes in ferroelectric thin-film applications. In particular, we investigated the contributions from bound charges

Auger spectroscopy and properties of Ir(Pt)/PZT(PZT/PT)/Ir nanosized thin-film structures

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The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films Applicable to Microwave Tunable Devices

, since these are important scientifically as well as technologically: the

Retention characteristics of Pb(Zr, Ti)O3 films deposited by various methods for high-density non-volatile memory

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Preparation of Pb(ZrxTi1 - x)O3 Films on Trench Structure for High-Density Ferroelectric Random Access Memory

of a metal electrode is one of the major factors determining the depolarization field inside a ferroelectric capacitor. To obtain