Seema B. Anand

A multistandard, multiband SoC with integrated BT, FM, WLAN radios and integrated power amplifier

The growing occurrences of WLAN, BT, and FM on the same mobile device have created a demand for putting all three on the same die to save on die size, I/O count, BOM, and ultimately cost. Common blocks such as crystal oscillator, bandgap, and power management units can be easily shared. This paper presents a solution in which 802.11a/b/g WLAN, single-stream 11n (SSN) WLAN, BT, and FM subsystem and radio are integrated on a single die.

Direct-conversion CMOS transceiver with automatic frequency control for 802.11a wireless LANs

A 11.7mm/sup 2/ 5GHz direct-conversion 0.18/spl mu/m CMOS transceiver achieves a sensitivity of -93dBm, a system NF of 4.5dB (high gain), and IIP3 of -4.8dBm (low gain). Dissipation is 150mW in RX mode and 380mW while transmitting 15dBm OFDM signal.

A Single-Chip Bluetooth EDR Device in 0.13μm CMOS

A low-power single-chip Bluetooth EDR device is realized using a configurable transformer-based RF front-end, a low-IF receiver and direct-conversion transmitter architecture. It is implemented in a 0.13mum CMOS process and occupies 11.8mm2. Sensitivity for 1, 2 and 3Mb/s rates is -88, -90, and -84dBm and transmitter differential EVM is 5.5% rms.

On the Dynamics of Regenerative Frequency Dividers

A comprehensive analytical study of regenerative frequency dividers (RFD) is presented. The study includes two fundamental modes of operation in RFDs, namely locked (or stable) and quasi-locked modes, and the study also covers the transition from free-running oscillation to quasi-locked, and ultimately to locked operation mode. Differential equations characterizing the RFD behavior for both operation modes as well as the transition between the two are derived. An RFD circuit for Bluetooth applications was designed and fabricated in a 65-nm CMOS process with a supply voltage of 1.2 V. Measurement results of the RFD prototype verify the accuracy of the proposed analytical models

A 4.92-5.845 GHz direct-conversion CMOS transceiver for IEEE 802.11a wireless LAN

A fully integrated CMOS direct-conversion 5 GHz transceiver is implemented in a 0.18 /spl mu/m digital CMOS process and housed in an LPCC-48 package. This chip, along with a companion baseband chip, provides a complete 802.11a solution covering all of the world-wide 4.92-5.845 GHz bands. The receiver achieves a 3.5 dB NF while the transmitter achieves a +23 dBm saturated output power. The integrated PA utilizes a linearization technique to allow for high efficiency while maintaining the linear operation required by QAM64 OFDM signals. The transceiver achieves low cost and high yield through the use of various integrated self-contained or system level calibration techniques.

A 0.9dB NF 9mW 28nm triple-band GNSS radio receiver

In order to achieve noise figure smaller than 1dB, the GNSS receivers require external LNA, which adds area, cost and current consumption. A 28nm CMOS sub-1dB NF 9mW GNSS receiver is presented, requiring no external components. This work takes advantage of symmetry in performance between NMOS and PMOS at 28nm node and demonstrates that low NF is possible on advanced CMOS at low power levels, with proper design of on-chip matching components.

A fully integrated SoC for 802.11b in 0.18 /spl mu/m CMOS

A fully integrated system-on-a-chip (SOC) intended for use in 802.11b applications is built in 0.18-/spl mu/m CMOS. All of the radio building blocks including the power amplifier (PA), the phase-locked loop (PLL) filter, and the antenna switch, as well as the complete baseband physical layer and the medium access control (MAC) sections, have been integrated into a single chip. The radio tuned to 2.4 GHz dissipates 165 mW in the receive mode and 360 mW in the transmit mode from a 1.8-V supply. The receiver achieves a typical noise figure of 6 dB and -88-dBm sensitivity at 11 Mb/s rate. The transmitter delivers a nominal output power of 13 dBm at the antenna. The transmitter 1-dB compression point is 18 dBm and has over 20 dB of gain range.