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Dive into the research topics where Seh-Jin Park is active.

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Featured researches published by Seh-Jin Park.


Journal of Vacuum Science & Technology B | 2007

Growth and printability of multilayer phase defects on extreme ultraviolet mask blanks

Ted Liang; Erdem Ultanir; Guojing Zhang; Seh-Jin Park; Erik H. Anderson; Eric M. Gullikson; Patrick P. Naulleau; Farhad Salmassi; Paul B. Mirkarimi; Sherry L. Baker

The ability to fabricate defect-free reflective Mo–Si multilayer (ML) blanks is a well-recognized challenge in enabling extreme ultraviolet (EUV) lithography for semiconductor manufacturing. Both the specification and reduction of defects necessitate the understanding of their printability and how they are generated and grow during ML deposition. A ML phase defect can be depicted by its topographical profile on the surface as either a bump or pit, which is then characterized by height or depth and width. These phase defects are complex in nature and their impact to resist printing. The authors developed an effective way to study phase defects with programmed defect mask (PDM) as “model” test vehicle. The defects are produced with tuned ML deposition process and placed in varying proximity to absorber patterns on the mask. This article describes the recent study of ML phase defect printability from exposures of a ML PDM on the EUV microexposure tool with annular, monopole, and dipole illuminations.


Proceedings of SPIE, the International Society for Optical Engineering | 2006

EUV Mask Process Development and Integration

Guojing Zhang; Pei-Yang Yan; Ted Liang; Yan Du; Peter Sanchez; Seh-Jin Park; Eric J. Lanzendorf; Chang Ju Choi; Emily Y. Shu; Alan R. Stivers; Jeff Farnsworth; Kangmin Hsia; Manish Chandhok; Michael J. Leeson; Gilroy Vandentop

It becomes increasingly important to have an integrated process for Extreme UltraViolet (EUV) mask fabrication in order to meet all the requirements for the 32 nm technology node and beyond. Intel Corporation established the EUV mask pilot line by introducing EUV-specific tool sets while capitalizing on the existing photomask technology and utilizing the standard photomask equipment and processes in 2004. Since then, significant progress has been made in many areas including absorber film deposition, mask patterning optimization, mask blank and patterned mask defect inspection, pattern defect repair, and EUV mask reflectivity metrology. In this paper we will present the EUV mask process with the integrated solution and the results of the mask patterning process, Ta-based in-house absorber film deposition, absorber dry etch optimization, EUV mask pattern defect inspection, absorber defect repair, and mask reflectivity performance. The EUV resist wafer print using the test masks that are fabricated in the EUV mask pilot line will be discussed as well.


Proceedings of SPIE | 2009

Compensation of overlay errors due to mask bending and non-flatness for EUV masks

Manish Chandhok; Sanjay Goyal; Steven L. Carson; Seh-Jin Park; Guojing Zhang; Alan Myers; Michael L. Leeson; Marilyn Kamna; Fabian Martinez; Alan R. Stivers; Gian F. Lorusso; Jan Hermans; Eric Hendrickx; Sanjay Govindjee; Gerd Brandstetter; Tod A. Laursen

EUV blank non-flatness results in both out of plane distortion (OPD) and in-plane distortion (IPD) [3-5]. Even for extremely flat masks (~50 nm peak to valley (PV)), the overlay error is estimated to be greater than the allocation in the overlay budget. In addition, due to multilayer and other thin film induced stresses, EUV masks have severe bow (~1 um PV). Since there is no electrostatic chuck to flatten the mask during the e-beam write step, EUV masks are written in a bent state that can result in ~15 nm of overlay error. In this article we present the use of physically-based models of mask bending and non-flatness induced overlay errors, to compensate for pattern placement of EUV masks during the e-beam write step in a process we refer to as E-beam Writer based Overlay error Correction (EWOC). This work could result in less restrictive tolerances for the mask blank non-flatness specs which in turn would result in less blank defects.


Photomask and Next-Generation Lithography Mask Technology XIX | 2012

Direct phase-shift measurement of thin and thick absorber EUV masks

Tetsunori Murachi; Hiroyoshi Tanabe; Seh-Jin Park; Eric M. Gullikson; Taichi Ogase; Tsukasa Abe; Naoya Hayashi

The measurement and extraction method of phase-shift values for thin & thick absorber Extreme Ultra-Violet (EUV) masks has been studied by both of experiments and simulations. We fabricated 4 EUV masks with different absorber thicknesses. We first estimated the phase-shift values from the absorber thicknesses of each mask and the n&k values which were derived in advance by other experiments. This method is indirect and may contain plate-by-plate errors. In order to extract the phase-shift values directly, we developed a phase-shift measurement method based on scatterometry. We measured the reflectivity of the open and dark area of the 4 masks by using the EUV reflectometer at Lawrence Berkeley National Laboratory (LBNL). We also measured the diffracted light intensities of grating pattern. The phaseshift values were derived from these data assuming an interference of reflected and diffracted lights. We calibrated the method by including the shadowing effect of 6 degree incident angle, and adding the information on the measured mask patterns. The extraction results of phase-shift values by this method agreed well within the error bar. The absorber thickness having 180 degree phase-shift, which works as an embedded attenuated phase-shifting mask, could be somewhere between 66 nm and 76 nm. The measurement accuracy of this method depends on the phase-shift values. The error becomes the largest at 180 degree phase-shift, and the worst one in this experiment was much larger than the proposed phase-shift measurement accuracy of ± 2 degree [1]. Much effort will be required to achieve this target.


Photomask Technology 2011 | 2011

Phase-shifting effect of thin-absorber EUV masks

Hiroyoshi Tanabe; Tetsunori Murachi; Sang H. Lee; Manish Chandhok; Seh-Jin Park; Guojing Zhang; Tsukasa Abe; Taichi Ogase; Naoya Hayashi

Phase-shifting effect of EUV masks with various absorber thicknesses has been studied both by simulations and experiments. In EUV lithography, masks with 180 phase shifting absorber work like embedded attenuated phase-shifting masks. At 66nm thickness of TaN/TaON absorber, 180 degree phase shifting can be achieved in theory. Based on the experiments, we observed that the true180 degree phase shifting can be achieved with absorber thickness between 66 and 76 nm. In this paper, phase shifting impact of the various thickness absorbers has been characterized. Imaging performance of masks with 51 nm, 66 nm and 76 nm thick absorber has been experimentally compared. The process window of various thickness absorber masks are rigorously studied.


Proceedings of SPIE, the International Society for Optical Engineering | 2009

Improvement of EUVL Mask Blank Inspection Capability at Intel

Andy Ma; Ted Liang; Seh-Jin Park; Guojing Zhang; Tomoya Tamura; Kazunori Omata; Yuta Sato; Hal Kusunose

Extreme ultraviolet lithography (EUVL) is a leading technology to succeed optical lithography for high volume production of 22 nm node and beyond. One of the top risks for EUVL is the readiness of defect-free masks, especially the availability of Mo/Si mask blanks with acceptable defect level. Fast, accurate and repeatable defect inspection of substrate and multi-layer (ML) blank is critical for process development by both blank suppliers and mask makers. In this paper we report the results of performance improvements on a latest generation mask blank inspection tool from Lasertec Corporation; the MAGICS M7360 at Intel Corporations EUV Mask Pilot Line. Inspection repeatability and sensitivity for both quartz substrates (Qz) and ML blanks are measured and compared with the previous Phase I tool M7360. Preliminary results of high speed scan correction mirror implementation are also presented


Proceedings of SPIE, the International Society for Optical Engineering | 2008

Pattern placement correction due to bending in EUVL masks

Seh-Jin Park; Manish Chandhok; Marilyn Kamna; Chuan Hu; Guojing Zhang; Fabian Martinez; Nathan Wilcox; Kangmin Hsia; Alan R. Stivers

Extreme Ultraviolet Lithography (EUVL) masks have residual stress induced by several thin films on low thermal expansion material (LTEM) substrates. The stressed thin films finally result in convex out-of-plane displacement (OPD) of several 100s of nm on the pattern side of the mask. Since EUVL masks are chucked on EUVL scanners differently from on e-beam writer, the mask pattern placement errors (PPE) are necessary to be corrected for to reduce overlay errors. In this paper, experimental results of pattern placement error correction using standard chrome on glass (COG) plate will be discussed together with simulations. Excellent agreement with simple bending theory is obtained. Suitability of the model to compensate for other EUVL-related PPEs due to mask non-flatness will be discussed.


Photomask Technology 2013 | 2013

Direct phase-shift measurement of an EUV mask with gradient absorber thickness

Hiroyoshi Tanabe; Tetsunori Murachi; Seh-Jin Park; Eric M. Gullikson; Tsukasa Abe; Naoya Hayashi

We directly extracted the phase-shift values of an EUV mask by measuring the reflectance of the mask. The mask had gradient absorber thickness along vertical direction. We measured the reflectance of the open multilayer areas and the absorber areas by using an EUV reflectometer at various absorber thicknesses. We also measured the diffracted 0th order light intensities of grating patterns having several sizes of lines or holes. The phase-shift values were derived from these data assuming a flat mask interference model of the diffracted lights. This model was corrected by including the scattering amplitude from the pattern edges. We recalculated the phase-shift values which was free from the mask topological effect. The extracted phase-shift value was close to 180 degrees at 67 nm and 71 nm absorber thicknesses. The phase measurement error around 180 degree phase shift was 5 degrees (3σ).


Proceedings of SPIE, the International Society for Optical Engineering | 2006

EUV mask pattern defect printability

Ted Liang; Guojing Zhang; Patrick P. Naulleau; Alan Myers; Seh-Jin Park; Alan R. Stivers; Gilroy Vandentop


Archive | 2008

Revised Optical constants of tantalum for EUV mask absorber materials

Eric M. Gullikson; Farhad Salmassi; Andy Aquila; Joel Frederico; Seh-Jin Park

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Eric M. Gullikson

National Institute of Standards and Technology

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Farhad Salmassi

Lawrence Berkeley National Laboratory

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Patrick P. Naulleau

Lawrence Berkeley National Laboratory

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