Stefan Schumann

A low-noise energy-efficient inductor-less 50 Gbit/s transimpedance amplifier with high gain-bandwidth product in 0.13 µm SiGe BiCMOS

A 50 Gbit/s transimpedance amplifier input stage implemented in a 0.13 μm SiGe BiCMOS technology with high gain-bandwidth product, high energy efficiency and low noise is presented. The amplifier is designed to act as an input stage of an integrated receiver front-end. The circuit consists of a low stage count topology and achieves a high transimpedance over a large bandwidth without applying area consuming peaking inductors. Measurements of the fabricated chip show a forward gain of more than 16 dB and a transimpedance gain of 53.5 dBΩ over a bandwidth of 35 GHz. The circuit consumes a power of less than 14 mW from a 3.3 V supply and requires a chip area of only 0.158 mm2 including pads.

Packaging of ultra-high speed optical fiber data interconnects

The ever increasing data traffic in data centers requires development of new optical fiber transmission technologies. One of the key challenges is development of packaging techniques that can allow low-cost manufacturing of optical data interconnects with the data rates 50+ Gb/s. Such packaging techniques on one hand need to provide reliable connection to the optical fiber on the other hand interface the modules with the high-speed electrical signals. In this paper we introduce the concept for the packaging of the data interconnect transceiver modules that allow operation up to 56 Gb/s. The packaging of data interconnects is based on high accuracy micro assembly. Further investigations on the electrooptical chip lanes in GSGSG and GSSG configurations are presented and impact on the system performance is shown. The obtained results indicate possibility to realize the packaging of electro-optical components up to 100 Gb/s non-return to zero (NRZ) data rates.