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Steven Langdon

GlobalFoundries

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Publication

Featured researches published by Steven Langdon.

Archive | 2015

Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structures

Thilo Scheiper; Jan Hoentschel; Steven Langdon

Archive | 2012

Polysilicon Resistors Formed in a Semiconductor Device Comprising High-K Metal Gate Electrode Structures

Thilo Scheiper; Steven Langdon

Archive | 2011

Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloy

Stefan Flachowsky; Thilo Scheiper; Steven Langdon; Jan Hoentschel

Archive | 2011

Low-Diffusion Drain and Source Regions in CMOS Transistors for Low Power/High Performance Applications

Jan Hoentschel; Stefan Flachowsky; Steven Langdon; Thilo Scheiper

Archive | 2011

Methods for fabricating integrated circuits using non-oxidizing resist removal

Stefan Flachowsky; Steven Langdon; Thomas Feudel

Archive | 2012

Durchlassstromerhöhung in Feldeffekttransistoren durch asymmetrische Konzentrationsprofile von Legierungssubstanzen einer Kanalhalbleiterlegierung

Stefan Flachowsky; Thilo Scheiper; Steven Langdon; Jan Hoentschel

Archive | 2012

Semiconductor device and method for forming reistance structure thereof

Thilo Scheiper; Steven Langdon

Archive | 2012

Verringerte Schwellwertspannungs-Breitenabhängigkeit in Transistoren, die Metallgateelektrodenstrukturen mit großem ε aufweisen

Jan Hoentschel; Steven Langdon; Thilo Scheiper

Archive | 2012

Gering diffundierte Drain- und Sourcegebiete in CMOS-Transistoren für Anwendungen mit hoher Leistungsfähigkeit und geringer Leistung

Jan Hoentschel; Stefan Flachowsky; Steven Langdon; Thilo Scheiper

Archive | 2012

Polysiliziumwiderstände, die in einem Halbleiterbauelement mit Metallgateelektrodenstrukturen mit großem ε hergestellt sind

Thilo Scheiper; Steven Langdon

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Thilo Scheiper

GlobalFoundries

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Jan Hoentschel

GlobalFoundries

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Stefan Flachowsky

GlobalFoundries

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Thomas Feudel

GlobalFoundries

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