Kousaku Yano

Plasma Damage of Gate Oxide through the Interlayer Dielectric

The degradation of thin gate oxides connected with the interconnect under the interlayer dielectric(IlD) by Ar plasma inadiation was observed. The electric field of gate oxide breakdown and the total charge to breakdovn(QBD were dependent on the material of the ILD. The current density through the ILD, calculated from QBD, was nearly equal to the measured value. Plasma damage through the ILD is caused mainly by the leakage current of the ILD. A-3-3

A Low Parasitic Capacitance Scheme by Thermally Stable Titanium Silicide Technology for High Speed Complementary-Metal-Oxide-Semiconductor

This paper presents a dopant drive-out process from elevated source/drain (S/D) structures with titanium silicide local interconnects, which reduces not only the S/D areas but also junction capacitance in advanced complementary-metal-oxide-semiconductor (CMOS) fabrication. A low-oxygen-content process with an optimized boron (B) doping realizes a thermally stable titanium silicide with reduced Ti–B compound formation. Electrical measurements of the metal-oxide-semiconductor field effect transistors (MOSFETs) show good I-V characteristics and high endurance to short-channel effects. Furthermore, the MOSFETs have hot-carrier and bias-temperature aging properties similar to those of controlled devices. Consequently, it has been clarified that the delay time per stage of the MOSFETs with the local interconnects can be reduced with decreasing junction capacitance.

High Temperature Void Formation Induced by H2O in Al Interconnection with SiN/PSG Passivation

l.Introduction One of the most important issues in VLSI metallization reliability is an open failure caused by the so-called stress-induced void formation of Al interconnection. It has been reported that slit-like or wedge-like voids in low temperature mode are due to thermal expansion coefficient mismatches between surrounding materials 1). However, the mechanism of round-shaped void formation of Al interconnection has not been well clarified, occu..ing during heating period at high temperature above 400oC when SiN/PSG passivation is used 2). When SOG is used as an interlevel dielectric, the outgasing of H2O from SOG films was considered to affect the round-shaped void formation 3). The purpose of this paper is to make clear the relation between HZO content in PSG and round-shaped void formation of Al interconnection covered with SiN/PSG passivation. The H2O behavior is studied by TEM, thermal desorption spectroscopy (TDS) and stress measurement.

A Low Parasitic Capacitance Scheme by Thermally Stable Titanium Silicide Technology for High Speed CMOS

This paper presents titanium silicided junctions by a dopant drive-out process from elevated source/drain (S/D) structures combined with titanium silicide local interconnects, which reduce not only the S/D areas but also junction capacitance in advanced CMOS fabrication. The local interconnects which extend over field oxides are directly connected to the lining for the whole S/D regions. The titanium silicide of the local interconnects is formed from a reaction of an amorphous (a)-Si/Ti bilayer. A low oxygen content process with boron (B) doping using an optimized implantation energy realizes a thermally stable titanium silicide with reduced Ti-B compound formation. The delay time per stage of the MOSFETs with these local interconnects is about 18Vo faster than that of conventional contact structure devices.

The Suppression of Precipitation in Boro-Phospho-Silicate-Glass Films by Surface Control by Silylation (SCS) Process

Simple su rf ace control by silylation (SCS) process is developed for suppression of precipitation in high impurity concentrations BPSG films. Increase in impurity concentrations causes a precipitation problem by moisture penetration. This process employs exposure to the vaporized hexamethyldisilazane or that spin coating after BPSG films deposition. Silylation then occurs at the BPSG su rface. Silyl radicals change BPSG surface from a hydrophilic to a hydrophobic one.