Thomas Adrian Hansen

Rie process for etching silicon isolation trenches and polycides with vertical surfaces

Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices

Metal silicide channel stoppers for integrated circuits and method for making the same

Trench etch process for dielectric isolation

Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching

Process for forming isolating trenches in integrated circuit devices

Method for relief-like structuring of silicon-surfaces

Rie-verfahren um isolationsrillen mit senkrechten flanken in silizium und polycid zu aetzen. Rie-moved by isolation grooves with vertical flanks in silicon and polycide etch.

Rie-verfahren um isolationsrillen mit senkrechten flanken in silizium und polycid zu aetzen.

Rie-moved by isolation grooves with vertical flanks in silicon and to etch polycide.