George Richard Goth

Lateral device structures using self-aligned fabrication techniques

Self-aligned metal process for integrated circuit metallization

Method of selectively exposing the sidewalls of a trench and its use to the forming of a metal silicide substrate contact for dielectric filled deep trench isolated devices

Metal silicide channel stoppers for integrated circuits and method for making the same

Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor

Trench etch process for dielectric isolation

Planarization process for organic filling of deep trenches

Self-aligned channel stop

Method of making shallow junction complementary vertical bipolar transistor pair

Method of forming self-aligned P contact