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Dive into the research topics where Toshiharu Nagumo is active.

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Featured researches published by Toshiharu Nagumo.


international electron devices meeting | 2010

Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps

Toshiharu Nagumo; Kiyoshi Takeuchi; Takashi Hase; Y. Hayashi

Distributions of trap position, energy, amplitude, time constants of random telegraph noise and their correlation are examined by characterizing multiple individual traps. The traps detected were not uniformly distributed in the energy space. Contrary to the elastic tunneling model, there was no correlation between the time constants and depth-wise position.


international electron devices meeting | 2009

New analysis methods for comprehensive understanding of Random Telegraph Noise

Toshiharu Nagumo; Kiyoshi Takeuchi; S. Yokogawa; K. Imai; Y. Hayashi

New analysis methods useful for understanding both complex waveforms and statistical behaviors of Random Telegraph Noise (RTN) are proposed. Complex waveforms are clearly visualized using Time Lag Plots. Bias dependence of statistically extracted average trap number is discussed, with emphasis on the importance of undetectable traps on product reliability.


Archive | 2011

Evaluation method, evaluation apparatus, and simulation method of semiconductor device

Toshiharu Nagumo; Kiyoshi Takeuchi


symposium on vlsi circuits | 2011

Comprehensive SRAM design methodology for RTN reliability

Kiyoshi Takeuchi; Toshiharu Nagumo; Takashi Hase


Archive | 2014

SEMICONDUCTOR DEVICE HAVING FINFET STRUCTURES AND METHOD OF MAKING SAME

Toshiharu Nagumo


Archive | 2013

Field effect transistor with channel core modified for a backgate bias and method of fabrication

Tomohiro Hirai; Toshiharu Nagumo


Archive | 2014

SEMICONDUCTOR DEVICE HAVING COMPRESSIVELY STRAINED CHANNEL REGION AND METHOD OF MAKING SAME

Toshiharu Nagumo


Archive | 2013

Field effect transistor with channel core modified to reduce leakage current and method of fabrication

Tomohiro Hirai; Shogo Mochizuki; Toshiharu Nagumo


Archive | 2015

Semiconductor device and forming method

Toshiharu Nagumo; Kiyoshi Takeuchi; Toyoji Yamamoto


Archive | 2013

Field-effect transistor having channel core modified for back gate bias, and manufacturing method therefor

Tomohiro Hirai; 友洋 平井; Toshiharu Nagumo; 俊治 南雲

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