Tsuyoshi Kanki

On the Elements of High Throughput Cu-CMP Slurries Compatible with Low Step Heights

In order to achieve high throughput Cu-CMP compatible with low step heights in 32nm Node copper interconnect technologies and beyond, we believe it is crucial a passivation layer on the Cu surface in the slurry during the CMP process. We show that the formation of a passivation layer which achieves good planarization with high Cu removal rate can be controlled by selecting the rest potential of the Cu ions in the slurry.

Development of highly reliable Cu wiring of L/S=1/1µm for chip to chip interconnection

Highly dense and reliable Cu wiring of L/S=1/1μm for chip to chip interconnection was developed, by improving the semi-additive process To meet the reliability requirements, a mechanism for leakage failures in the HAST environment was identified, and the improved processes for suppressing Cu corrosion and diffusion were established by reducing halogen ions and covering with metal cap barriers.