V.S. Pershenkov

The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

It is shown that emitter-base junction bias is significant for low dose rate irradiation response of npn and pnp bipolar transistors. The effect is more pronounced for pnp transistor. Experimental results are explained in terms of fringing electric field model. The role of fringing field is confirmed by the radiation induced charge neutralization experiment. The experimental results on the effect of emitter junction bias on the elevated temperature high dose rate irradiation of bipolar devices and its application for low dose rate response simulation are discussed.

Use of MOS structures for the investigation of low-dose-rate effects in bipolar transistors

A possible physical mechanism for bipolar transistor low-dose-rate irradiation response is discussed. This mechanism is described in terms of shallow electron traps in oxide. The experimental results on positive charge build-up at low dose-rates and small electric field in oxide are presented. The use of an MOS transistor in bipolar mode for investigation of surface peripheral recombination current in bipolar transistors and extraction of MOS structure physical parameters is described.

Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review

Ionizing-radiation effects on space microelectronics are addressed. Major approaches to the radiation-hardness evaluation of IC components in terms of total-dose effects at low dose rates are reviewed. The main mechanisms and kinetic models of radiation degradation are discussed from the standpoint of the prediction of IC radiation response.

Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices

Modeling of the field and thermal dependencies of radiation-induced charge annealing, based on the assumption that the energy level of defects in the oxide is located within the Si forbidden gap, is described and verified. A novel concept of the thermoactivated nature of tunneling exchange between the defects and the Si substrate is proposed.

Three-point method of prediction of MOS device response in space environments

A method for low-dose-rate MOS device response prediction based on the linear dependence between positive oxide charge anneal and interface states build-up is presented and experimentally verified. A linear relationship is seen to exist between the build-up of slow interface states and oxide trapped hole annealing. The physical explanation of the correlation between the number of trapped holes annealed and the number of interface states generated can be given in both hydrogen and trapped hole conversion models on a phenomenological basis. It is suggested that there is a one-to-K/sub Oi/ relationship (where K/sub Oi/ is some phenomenological constant) between the number of trapped holes annealed and the number of interface states generated. >

IC’s radiation effects modeling and estimation

Abstract The approach for ICs radiation hardness estimation and fault prediction is presented in this paper. It is based on the implementation of low-energy laboratory simulation sources (laser, X-ray, etc.). The possibility of radiation simulator application is based on similarity of physical processes in semiconductor structures causing IC upsets and failures under the radiation environment and under simulation sources. The analysis of adequacy is performed for total dose effects, single event effects, displacement effects and transient radiation effects. The application of imitators permits to change the expensive and low-productive radiation test installations with much more effective simulation sources, based on the dominant effects equivalence. The designed simulation test methods are proved to be an effective tool to different IC radiation hardness estimation and fault prediction in radiation environment.

Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses

The postirradiation response of n-channel MOSTs during thermal and electrical stresses is investigated. It is found that reversible positive charge annealing plays a key role in the postirradiation response of the MOST. A mathematical model of reversible charge relaxation process is suggested.

Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment

A new analytical model for enhanced yield of radiation-induced charge in low-field thick oxides due to lesser recombination under low-dose-rate and high temperature conditions has been developed. Numerical simulations are quantitatively well agreed with experimental data

Thermal- and radiation-induced interface traps in MOS devices

The interface trap build-up mechanisms during post-irradiation thermal annealing and radiation-induced charge neutralisation (RICN) are experimentally investigated. The role of substrate electrons is shown to be significant in post-irradiation interface trap build-up. The RICN is found to be incapable to replace a standard thermal annealing test in terms of conservative low dose rate response estimation.

Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation

A review is presented of an integrated approach to hardness assurance, embracing single-event and global pulsed-ionization effects. The strategy essentially combines numerical and physical simulation in order to obtain reliable data on IC radiation response with minimum expenditure of time and money. The way in which calculations and measurements should be combined depends on the type of IC and the radiation conditions. It is shown that the cost of measurement can be reduced by using laboratory radiation simulators and each form of radiation of interest can be simulated with an agent readily available for the tester. Particular coverage is given to simulation with lasers.