Vladimir V. Shurenkov

Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices

A technique for extracting the fitting parameters of the conversion model of enhanced low dose rate sensitivity in bipolar integrated circuits is proposed. This technique is based on studying postirradiation annealing and high-temperature irradiation. Proceeding from the experimental results for two types of bipolar transistors, the parameters of the conversion model are determined and the S-shaped characteristics of the examined devices are reconstructed. These data can be used to predict their long-term lifetime in space under exposure to low dose rates of ionizing radiation.

True dose rate physical mechanism of ELDRS effect in bipolar devices

Abstract Physical mechanism of enhanced low dose rate sensitivity effect in bipolar devices is observed. It is shown, that the accumulation of the defects during low dose rate irradiation depends on the irradiation time only, while true dose rate effects contribution to enhanced low dose rate sensitivity effect is related with processes during post-irradiation annealing. The conversion model of low dose rate effect was used for numerical description of the radiation responses of input bias currents of bipolar operational amplifiers in wide range of dose rates.

Effect of low-temperature irradiation on ELDRS in bipolar transistors

The possible physical mechanism of ELDRS effect in bipolar transistors for room and low-temperature irradiation is described. The ELDRS-free device at room temperature suffers on this effect at low-temperature irradiation.

ELDRS Susceptibility of Bipolar Transistors and Integrated Circuits During Low-Temperature Irradiation

The enhanced low dose rate sensitivity (ELDRS) susceptibility of 2N2222 bipolar transistors and LM111 voltage comparators was investigated during irradiation at low temperature and compared with corresponding room-temperature data. The possible physical mechanism of the ELDRS effect in bipolar transistors and integrated circuits during irradiation at room temperature and low temperature was described. A device that is ELDRS-free at room temperature suffers from this effect during irradiation at low temperature.

Modeling of IMS Spectra in Medical Diagnostic Purposes

This paper is about embedding of the mathematical methods and development of the software for automatic modeling of IMS spectra. This goal is urgent for IMS analysis of marker substances in human breath for disease diagnosis. The presented method based on the well-known physical model of IMS spectra that is well described IMS spectra using a set of Gauss functions. This paper present next points : 1) Development of the methods for automatic search and identification of Gauss peaks in IMS spectrum. 2) Development of the methods for determining of parameters for Gauss peaks model.

ELECTROMAGNETIC PULSE EFFECTS AND DAMAGE MECHANISM ON THE SEMICONDUCTOR ELECTRONICS

In recent years, growing attention has been paid to the threat posed by high-power microwave electromagnetic interference, which can couple into semiconductor electronic devices intentionally from microwave sources or unintentionally due to the proximity to general environmental HF signals. The microwave interference is often considered to have a pulse width ranging from several to several hundreds of nanoseconds. This paper examines physical mechanism of malfunction and destruction of electronic devices by high power microwaves electromagnetic pulse

Management of Ionization Source Based on a Pulsed Corona Discharge

It is developed igniting electrical circuit for pulsed corona discharge ionization to operate a source as part of an ion mobility spectrometer. The simulation circuit for forming a corona discharge allowed optimizing the parameters. The possibility of electronic switching of the primary winding and reverse polarity diodes in the high voltage part of the circuit provide operation of the corona discharge ion source for detection both positive and negative ions.

The Issue of Using Test Dose Rate 10 mrad(Si)/s for ELDRS Prediction in MIL-STD-883-H

The validity of MIL STD 883 H test method at dose rate less than 10 mrad(Si)/s is discussed. The prediction capability of conversion model is evaluated at ultra-low dose rates in comparison with standard MIL-STD-883-H.

The Technique for Estimation of the Chip Temperature of Integrated Circuits during Irradiation

The technique for estimation of the chip temperature of integrated circuits during irradiation is described. The technique is based on the experimental determination of the actual value of junction-to-ambient thermal resistance.

Mechanism of the Saturation of the Radiation Induced Interface Trap Buildup

Ionizing radiation impact leads to degradation of electrical parameters of microelectronic devices. It is necessary to take this fact to account when dealing with microcircuits for space applications and high energy physics. Main physical reason of radiation-induced failures of spaceship and front end electronic equipment is buidup of interface traps at Si-SiO2 interface in semiconductor transistor structures. The original mechanism of interface trap annealing based on radiation induced charge neutralization (RICN) effect is presented. It is supposed that the positive charge of trapped holes in oxide is transformed through electron capture into a new defect (the AD center). The AD centers act as interface traps. The appearance of the A–D+ state leads to the annihilation of the AD center or annealing of interface trap. The annihilation process can be stimulated by radiation induced or substrate electrons. The competitive between accumulation and annihilation processes leads to saturation of the interface trap buildup. The value of density of interface trap in saturation depends on product of interface trap accumulation rate (Kacc)it and constant KAD which is function of thermal velocity, capture cross-section of AD center, generation rate and electron yield of radiation induced electrons. The extraction of these parameters allows explaining a known experimental data. The alternative mechanism of the interface trap saturation connected with the exhaustion of initial interface trap precursors is considered.