Vladimir V. Belyakov

Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices

A technique for extracting the fitting parameters of the conversion model of enhanced low dose rate sensitivity in bipolar integrated circuits is proposed. This technique is based on studying postirradiation annealing and high-temperature irradiation. Proceeding from the experimental results for two types of bipolar transistors, the parameters of the conversion model are determined and the S-shaped characteristics of the examined devices are reconstructed. These data can be used to predict their long-term lifetime in space under exposure to low dose rates of ionizing radiation.

Equipment and Test Results of the Electronic Components to SEE in the Temperature Range

This paper presents SEE test facility as well as its opportunities of integrated microcircuit tests in the temperature range. The used method of heating and cooling of DUT was considered in vacuum chamber of test facility.

The estimation of long time operation bipolar devices in space environment using conversion model of ELDRS

On base of the proposed conversion model, the radiation degradation of LM111 comparator input current is considered during dose rate variation corresponding 12 hour orbit, cyclic device temperature variation and impact of solar flare during space mission.

ELDRS in SiGe transistors for room and low-temperature irradiation

Abstract The possible physical mechanism of ELDRS effect in the silicon-germanium (SiGe) bipolar transistors for room and low-temperature irradiation is described. The mechanism is connected with narrowing of the bandgap in transistor base region due to Ge content.

True dose rate physical mechanism of ELDRS effect in bipolar devices

Abstract Physical mechanism of enhanced low dose rate sensitivity effect in bipolar devices is observed. It is shown, that the accumulation of the defects during low dose rate irradiation depends on the irradiation time only, while true dose rate effects contribution to enhanced low dose rate sensitivity effect is related with processes during post-irradiation annealing. The conversion model of low dose rate effect was used for numerical description of the radiation responses of input bias currents of bipolar operational amplifiers in wide range of dose rates.

Effect of low-temperature irradiation on ELDRS in bipolar transistors

The possible physical mechanism of ELDRS effect in bipolar transistors for room and low-temperature irradiation is described. The ELDRS-free device at room temperature suffers on this effect at low-temperature irradiation.

ELDRS Susceptibility of Bipolar Transistors and Integrated Circuits During Low-Temperature Irradiation

The enhanced low dose rate sensitivity (ELDRS) susceptibility of 2N2222 bipolar transistors and LM111 voltage comparators was investigated during irradiation at low temperature and compared with corresponding room-temperature data. The possible physical mechanism of the ELDRS effect in bipolar transistors and integrated circuits during irradiation at room temperature and low temperature was described. A device that is ELDRS-free at room temperature suffers from this effect during irradiation at low temperature.

Modeling of IMS Spectra in Medical Diagnostic Purposes

This paper is about embedding of the mathematical methods and development of the software for automatic modeling of IMS spectra. This goal is urgent for IMS analysis of marker substances in human breath for disease diagnosis. The presented method based on the well-known physical model of IMS spectra that is well described IMS spectra using a set of Gauss functions. This paper present next points : 1) Development of the methods for automatic search and identification of Gauss peaks in IMS spectrum. 2) Development of the methods for determining of parameters for Gauss peaks model.

Ion Mobility Spectrometer for Rapid Simultaneous Detection of Positive and Negative Ions

Ion Mobility Spectrometry (IMS) is a common technology used for rapid detection of trace amounts of explosives (mostly forming negative ions) and drugs (forming positive ions). Emergency chemically hazardous substances widely used in modern industry. Some emergency chemically hazardous substances form positive ions, others form negative ions. Therefore, for the detection of different substances in real time is required to apply the structure of two IMS-detectors. The article describes a device for the simultaneous detection of ions of both polarities with the ionization source based on a pulsed corona discharge. Authors investigated the advantages and disadvantages of such construction compared to unipolar cell in terms of sensitivity. Experimental results have demonstrated.

Methods for the Self Calibration of Ion Mobility Spectrometer

In transport systems like airports, subway or railway stations widely used ion mobility spectrometers for hazardous toxic gases or explosives traces detection. At the present time ion mobility spectrometers use ionization sources based on the corona discharge. These sources of ionization require frequent calibration, especially if the device is used in the portable embodiment where rapid changes in ambient atmosphere are possible. Error false positives in such systems are critical – the evacuation of passengers transport terminal and emergency calls. To improve situation with false errors we develop system for the self calibration of ion mobility spectrometer based on combination of explosives vapors of and products released during the corona discharge combustion. Designed calibration system is based on corona discharge for ion mobility spectrometry. The control system is integrated into the overall spectrometer structure.