V. A. Telets

The New Gamma Irradiation Facility at the National Research Nuclear University MEPhI

The new gamma irradiation facility recently installed at the National Research Nuclear University MEPhI (Moscow, Russia) is presented.

Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices

Comparative experimental studies of the responses of typical representatives of integrated circuits (ICs) and semiconductor devices (SDs) with various designs to high-energy pulsed ionizing radiations from simulation facilities and laser simulators have been carried out. The differences between the hardness values under exposure to radiations from simulation facilities and laser simulators have been found to be no larger than the dosimetry errors when the power supply ionization current calibration procedure is used. The shapes of power supply ionization currents and output voltages in the ICs are almost identical qualitatively. The levels and patterns of the functional IC failures are completely identical for both types of radiation sources. As a result, we have proven that a joint application of simulation facilities and laser simulators provides a rational combination of the reliability and efficiency of testing ICs and SDs for hardness to dose rate.

System-on-chip: Specifics of radiation behavior and estimation of radiation hardness

The analysis results of typical radiation faults of the system-on-chip have been presented. The specifics of digital, analog-to-digital (mixed), and microwave system-on-chip are considered. A set of the basic parameters-criteria for the radiation hardness of system-on-chip of various classes is determined. Methodical and technical designs for controlling the operability of the System-on-chip by carrying out radiation tests are proposed.

Investigation of dose rate and TID effects in anisotropic magneto resistive sensor

Results of anisotropic magneto-resistive (AMR) sensor dose rate and total dose behavior are presented. Experiments conducted at LINAC and pulsed electron accelerator. A good agreement of theoretical and experimental transfer functions was found. Investigated AMR-sensor radiation behavior can affect device operation in space applications.

SEE Testing Results for RF and Microwave ICs

A short overview of single event effects for a variety of RF and microwave ICs is presented. New results obtained at the SPELS test center have been used along with published data.

Behavioral approach to design universal UHF RFID reader transceiver ICs

The proliferation of RFID applications motivates an integrated solution to decrease the size and cost of readers. This paper describes a behavioral approach to design of worldwide regulation compliant UHF RFID reader transceiver for ISO 18000-6 multi-class tags in the ISM band 860 MHz-960 MHz. The approach based on evaluation of the transceivers building blocks parameters (Dynamic Range, Noise Figure, Sensitivity, P1dB, Phase Noise etc.) in conjunction with required characteristics of complete RFID reader system, i.e. read range, data transmission rate, reading speed, and power consumption etc. Based on direct-conversion architecture, the reader transceiver integrates RF-blocks, frequency synthesizer, modulation and demodulation functions, low frequency analog baseband. Fabricated on a 0.42/0.25 um SiGe BiCMOS process, the transceiver is implemented in LTCC-module and produces output power of +17 dBm; the receiver sensitivity is down to - 85 dBm.

Verification of SRAM MСUs calculation technique for experiment time optimization

Single Event Upsets are a growing problem in memories. Therefore, it is important to properly characterize them in order to have a clear idea of how they behave in different applications and environments. Experiments using radiation are a usual method to achieve this goal. However, events produced in memories in this way tend to accumulate over time, being difficult to determine the true number of events that have affected the system. In this paper, several experiments have been conducted to validate a technique that allows calculating the number of real events that have been produced after a radiation test.

ELDRS in SiGe transistors for room and low-temperature irradiation

Abstract The possible physical mechanism of ELDRS effect in the silicon-germanium (SiGe) bipolar transistors for room and low-temperature irradiation is described. The mechanism is connected with narrowing of the bandgap in transistor base region due to Ge content.

Identification of Authenticity of Microelectronic Devices Using Radiation Simulation Modeling

The article outlines a methodological approach, core specifics and capabilities of radiation identification of microelectronic devices at a specified exposure to ionizing radiation.

Single-chip pressure sensor radiation hardness research

Transient and steady-state radiation response of a single-chip pressure sensor is investigated in (1...6) atm pressure range. The independence of radiation behavior on the applied pressure was observed. The sensor sensitivity variation is less than 0.01 % for total dose up to 3 Mrd. A model for dose rate effects is developed.