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Volker Grimm

Advanced Micro Devices

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Publication

Featured researches published by Volker Grimm.

ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation#N#Technology | 2008

Non‐Fluorine Plasma Strip of HDI Resist for 45 nm

A. Zakharov; Volker Grimm; C. Krueger; Ke Ping Han; Ivan Berry; Roger Sonnemans; Shijian Luo

High dose implant resist cleaning for ultra‐shallow junction at 45 nm and beyond requires complete photo‐resist and residual removal with near‐zero substrate loss and minimized dopant loss. Conventional fluorine‐containing plasma ashing results in significant dopant bleaching and a new partial plasma strip process was developed in this work to reduce dopant loss.

Archive | 2007

Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device

Kai Frohberg; Volker Grimm; Sven Mueller; Matthias Lehr; Ralf Richter; Jochen Klais; Martin Mazur; Heike Salz; Joerg Hohage; Matthias Schaller

Archive | 2007

Technique for removing resist material after high dose implantation in a semiconductor device

Christian Krueger; Volker Grimm; Lutz Eckart

Archive | 2003

Method of adjusting etch selectivity by adapting aspect ratios in a multi-level etch process

Christoph Schwan; Gunter Grasshoff; Volker Grimm

Archive | 2006

Lacquer contamination reducing method, involves forming lacquer mask, which unseals area of deformation induced layer, over layer to cover one transistor, and removing unsealed area of layer from area over another transistor

Kai Frohberg; Volker Grimm; Joerg Hohage; Jochen Klais; Matthias Lehr; Martin Mazur; Sven Mueller; Ralf Richter; Heike Salz; Matthias Schaller

Archive | 2003

Methods of forming a transistor having a recessed gate electrode structure

Christian Krueger; Thomas Feudel; Volker Grimm

Archive | 2005

Method of forming contact pads

Ronald Naumann; Volker Grimm; Tino Meinhold

Archive | 2009

METHOD FOR SELECTIVELY REMOVING A SPACER IN A DUAL STRESS LINER APPROACH

Kai Frohberg; Volker Grimm; Heike Salz; Heike Berthold

Archive | 2007

Verspanntes Zwischenschichtdielektrikum mit einer geringeren Wahrscheinlichkeit für eine Hohlraumbildung in einem Halbleiterbauelement unter Anwendung einer Ätzsteuerzwischenschicht mit erhöhter Dicke

Ralf Richter; Thorsten Kammler; Heike Salz; Volker Grimm

Archive | 2006

Method for removing of lacquer material after implantation with high dose in semiconductor component, involves carrying out of plasma enhanced etching process in oxygen and hydrogen-oxidic atmosphere for removing of lacquer mask material

Lutz Eckart; Volker Grimm; Christian Krueger

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Collaboration

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Heike Salz

Advanced Micro Devices

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Kai Frohberg

Advanced Micro Devices

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Christian Krueger

Advanced Micro Devices

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Jochen Klais

Advanced Micro Devices

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Ronald Naumann

Advanced Micro Devices

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Sven Mueller

Advanced Micro Devices

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Matthias Schaller

GlobalFoundries

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Ralf Richter

GlobalFoundries

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Christoph Schwan

Advanced Micro Devices

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Gunter Grasshoff

Advanced Micro Devices

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