Christian Krueger

Vertical Beam Angle Control: an Advancement/Requirement in Modern Ion Implant Manufacturing

As the industry moves to the new technology nodes of 45 nm and 32 nm devices, implant angle control becomes even more crucial for consistent device performance. Commercial single wafer ion implanters are able to measure and correct the horizontal incident angle of the ion beam. But the vertical beam angle (VBA) control has become a very important parameter as well. In this work the authors demonstrate the impact of a tilt variation for a 65 nm and a 45 nm MOS transistor generated by different beam setups on one machine. Comparisons are made for each technology with a controlled angle variation of ±4°. The Vt‐distribution should be reduced with better incident angle control allowing faster development of a new transistor node base line using the new VBA control technique from Axcelis.

Surface Charge Profiling — An advancement in Ion Implant Monitoring

As the industry gets on the new technology nodes of 65nm and 45nm devices, implant monitor becomes even more crucial for consistent device performance. Common practice has been the use of 4‐point probe with sheet resistance and thermal wave technique with the implant damage. However, both techniques have limitations on sensitivity. With the need of monitoring smaller variations in the ion implantation process, there is a need for a new and better approach on implant monitoring.A new non contact method using SCP (Surface Charge Profiling) is gradually gaining ground in the industry as a control technique for ion implantation. In this work, the authors compare the responses on implanted wafers with thermal wave, sheet resistance and SCP. Comparisons are made to implants of low doses, high doses and low energies.