Gunter Grasshoff

A novel approach for the patterning and high-volume production of sub-40-nm gates

A novel approach for the patterning and manufacturing of sub-40-nm gate structures is presented. Rather than using resist or an inorganic hardmask as the patterning layer, this gate patterning scheme uses an amorphous carbon (a:C) and cap hardmask to pattern small gates. Healthy and manufacturable gate lengths have been achieved below 35 nm with this scheme, and the potential exists for further extendibility.

Minimizing poly end cap pull back by application of DFM and advanced etch approaches for 65nm and 45 nm technologies

As feature sizes decrease and the overall design shrinks, it is becoming increasingly difficult to reliably pattern gate line ends, or poly end caps, so that they are able to extend over to the field area without bridging into an adjacent feature. Furthermore, the trimming of the lines during the gate etch process is necessary due to the desire to decrease the poly length. However, the line end is also trimmed while trimming the gate sidewall, often at higher rates than the sidewall itself. This investigation focuses on decreasing the poly line end pullback, defined as the tip of the gate past active, using lithography techniques and advanced etch approaches for the 65 nm and 45 nm nodes.