Volker Seidemann
Schott AG
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Volker Seidemann.
Journal of Physics: Conference Series | 2006
Ha-Duong Ngo; André Hiess; Volker Seidemann; Daniel Studzinski; Martin Lange; Jürgen Leib; Dzafir Shariff; Huma Ashraf; Mike Steel; Jon Reast
This paper is a brief report of plasma etching as applied to pattern transfer in silicon. It will focus more on concept overview and strategies for etching of tapered features of interest for MEMS and Wafer Level Packaging (WLP). The basis of plasma etching, the dry etching technique, is explained [1] and plasma configurations are described elsewhere [2][3]. An important feature of plasma etching is the possibility to achieve etch anisotropy. The plasma etch process is extremely sensitive to many variables such as mask material, mask openings and more important the plasma parameters.
IEEE Transactions on Advanced Packaging | 2010
Jüergen Leib; Florian Bieck; Ulli Hansen; Kok-Kheong Looi; Ha-Duong Ngo; Volker Seidemann; Dzafir Shariff; Daniel Studzinski; Nathapong Suthiwongsunthorn; Kenneth Tan; Ralph Wilke; Kwong-Loon Yam; Michael Töpper
Through-silicon-via (TSV) interconnects using the “via-last” approach are successfully applied for wafer-level packaging of complementary metal-oxide-semiconductor (CMOS) image sensors. Standard materials and processes are applied for redistribution on the backside of the devices, which is enabled by the use of plasma etched vias with tapered sidewalls. With this, high reliability for the packaged devices are achieved on component and board level. Based on the high uniformity for the via geometry in respect to the dimension of top opening, bottom opening, and sidewall angle, we discuss the coverage of those redistribution polymers and photo resists as the bases for high performance and high yield of the mature wafer-level packaging process for optical and M(O)EMS devices.
electronic components and technology conference | 2007
Volker Seidemann; Oliver Gyenge; Ulli Hansen; Thorsten Heuser; Simon Maus; Dietrich Mund; Klaus Espertshuber; Ralph Wilke; Jürgen Leib
The novel wafer-level packaging (WLP) process described in this paper allows quasi-hermetic capping of optical devices on wafer-level yielding miniaturized glass cavity windows on top of the optical area, at the same time leaving the contact area accessible for standard electrical connections i.e. wire bond. These smaller chip-size optical cavity packages are used within standard chip-on-board (COB) assemblies for high performance optical applications providing high yield and utmost reliability. In this paper the process flow of generating optical cavity glass wafers as well as of the wafer-level capping process is demonstrated and reliability data on wafer-level and package-level are discussed.
Archive | 2007
Dietrich Mund; Volker Seidemann; Edgar Pawlowski; Ralf Biertuempfel; Bernd Woelfing; Frank Fleissner; Petra Auchter-Krummel; Ulf Brauneck; Joseph S. Hayden; Ulrich Fotheringham
Archive | 2006
Ha-Duong Ngo; Volker Seidemann; Daniel Studzinski; Martin Lange; André Hiess
Archive | 2005
Michael Stelzl; Volker Seidemann; Jürgen Leib; Ha-Duong Ngo
Archive | 2006
André Hiess; Martin Lange; Ha-Duong Ngo; Volker Seidemann; Daniel Studzinski; ヒース アンドレ; シュトュッドツィンスキ ダニエル; ンゴ ハ−ドゥオン; ザイデマン フォルカー; ランゲ マルチン
Archive | 2006
Dietrich Mund; Volker Seidemann
Archive | 2007
Dietrich Mund; Volker Seidemann; Edgar Pawlowski; Ralf Biertümpfel; Bernd Wölfing; Frank Fleissner; Petra Auchter-Krummel; Ulf Brauneck; Joseph S. Hayden; Ulrich Fotheringham
Archive | 2007
Volker Seidemann; Oliver Gyenge; Ulli Hansen; Thorsten Heuser; Dietrich Mund; Klaus Espertshuber; Jtirgen Leib