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Wei-E Wang

Samsung

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Publication

Featured researches published by Wei-E Wang.

Archive | 2015

RECTANGULAR NANOSHEET FABRICATION

Ryan M. Hatcher; Robert C. Bowen; Wei-E Wang; Mark S. Rodder

Archive | 2015

METHODS OF FORMING DEFECT-FREE SRB ONTO LATTICE-MISMATCHED SUBSTRATES AND DEFECT-FREE FINS ON INSULATORS

Wei-E Wang; Mark S. Rodder; Rwik Sengupta

Archive | 2014

METHODS OF FORMING LOW-DEFECT STRAIN-RELAXED LAYERS ON LATTICE-MISMATCHED SUBSTRATES AND RELATED SEMICONDUCTOR STRUCTURES AND DEVICES

Wei-E Wang; Mark Stephen Rodder

Archive | 2017

SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT HIGHER METAL ROUTING LAYERS AND METHODS OF MANUFACTURING THE SAME

Titash Rakshit; Borna J. Obradovic; Rwik Sengupta; Wei-E Wang; Ryan M. Hatcher; Mark S. Rodder

Archive | 2014

Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods

Wei-E Wang; Mark S. Rodder; Robert C. Bowen

Archive | 2016

Relaxed Semiconductor Layers With Reduced Defects and Methods of Forming the Same

Wei-E Wang; Mark S. Rodder; Ganesh Hedge; Chris Bowen

Archive | 2017

Methods of Forming Nanosheets on Lattice Mismatched Substrates

Wei-E Wang; Mark S. Rodder; Borna J. Obradovic

Archive | 2017

MULTI-VT GATE STACK FOR III-V NANOSHEET DEVICES WITH REDUCED PARASITIC CAPACITANCE

Borna J. Obradovic; Titash Rakshit; Mark S. Rodder; Wei-E Wang

Archive | 2017

NANOSHEET AND NANOWIRE DEVICES HAVING SOURCE/DRAIN STRESSORS AND METHODS OF MANUFACTURING THE SAME

Jorge Kittl; Wei-E Wang; Mark S. Rodder

Archive | 2016

Multi-layer fin field effect transistor devices and methods of forming the same

Borna Obradovic; Robert C. Bowen; Titash Rakshit; Wei-E Wang; Mark S. Rodder

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Collaboration

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Mark S. Rodder

Samsung

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Borna J. Obradovic

Samsung

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Robert C. Bowen

Samsung

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Jorge Kittl

Samsung

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Rwik Sengupta

Samsung

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Ryan M. Hatcher

Samsung

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Titash Rakshit

Intel

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Mark S. Rodder

Samsung

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Chris Bowen

Samsung

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Borna Obradovic

Intel

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