Wilhelm

A 60 GHz broadband amplifier in SiGe bipolar technology

A broadband amplifier with 16 dB gain and a 3-dB bandwidth of more than 60 GHz is presented. This amplifier exhibits a 1-dB compression point of -9.5 dBm and a third-order intercept point of +2.1 dBm referred to the input. The maximum differential output voltage swing is 1.5 VPP. Clear output eye diagrams have been measured up to 100 Gbit/s. The chip is manufactured in an advanced SiGe bipolar technology and consumes a power of 770 mW at a supply voltage of -5.0 V.

Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies

The noise properties of silicon and SiGe bipolar technologies at identical design rules are evaluated by theory and by experimental LNAs designed for the frequencies of 2 GHz, 6 GHz, and 10 GHz. For a fair comparison the same circuit principle is used for all six LNAs, with gain of about 20 dB or above, suitable for the applications in wireless communications.

A monolithic 2.8 V, 3.2 W silicon bipolar power amplifier with 54% PAE at 900 MHz

This work presents a balanced two-stage monolithic power amplifier in Si bipolar technology for 0.8-1 GHz. On-chip transformers are used as input-baluns as well as for interstage matching. A closed-loop bias circuit is introduced to diminish break-down effects and increase the maximum usable supply voltage. The chip is operating from 2.8 V to 4.5 V. At 2.8 V the output power is 3.2 W with a power-added efficiency of 54%. The maximum output power of 7.7 W with an efficiency of 57% is achieved at 4.5 V supply voltage. The small-signal gain is 38 dB.

Monolithic LNAs up to 10 GHz in a production-near 65 GHz f/sub max/ silicon bipolar technology

Monolithic LNAs for frequencies of 2, 6, and 10 GHz have been fabricated in production-near silicon bipolar technology (0.4 /spl mu/m/65 GHz, f/sub max/). Measured results in 50 /spl Omega/ noise figure and gain are 1.1 dB/28 dB at 1.9 GHz, 1.8 dB/26 dB at 5.6 GHz, 2.8 dB/21.1 dB at 9.5 GHz, and 2.5 dB/16.6 dB at 10 GHz. These noise results are state of the art for homojunction silicon bipolar technologies and are able to compete with the best results for minimum noise figures published for SiGe technologies.