Woopyo Jeong

Computation sharing programmable FIR filter for low-power and high-performance applications

This paper presents a programmable digital finite-impulse response (FIR) filter for high-performance and low-power applications. The architecture is based on a computation sharing multiplier (CSHM) which specifically targets computation re-use in vector-scalar products and can be effectively used in the low-complexity programmable FIR filter design. Efficient circuit-level techniques, namely a new carry-select adder and conditional capture flip-flop (CCFF), are also used to further improve power and performance. A 10-tap programmable FIR filter was implemented and fabricated in CMOS 0.25-/spl mu/m technology based on the proposed architectural and circuit-level techniques. The chips core contains approximately 130 K transistors and occupies 9.93 mm/sup 2/ area.

A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface

A monolithic 64 Gb MLC NAND flash based on 21 nm process technology has been developed. The device consists of 4-plane arrays and provides page size of up to 32 KB. It also features a newly developed asynchronous DDR interface that can support up to the maximum bandwidth of 400 MB/s. To improve performance and reliability, on-chip randomizer, soft data readout, and incremental bit line pre-charge scheme have been developed.

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers

Todays explosive demand for data transfer is accelerating the development of non-volatile memory with even larger capacity and cheaper cost. Since the introduction of 3D technology in 2014 [1], V-NAND is believed to be a successful alternative to planar NAND and is quickly displacing planar NAND in the SSD market, due to its performance, reliability, and cost competitiveness. V-NAND has also eliminated the cell-to-cell interference problem by forming an atomic layer for charge trapping [2], which enables further technology scaling. However, the etching technology required for creating a channel hole cannot keep up with the market-driven WL stack requirement. Therefore, total mold height reduction is unavoidable and this creates several problems. 1) reduced mold height increases resistance and capacitance for WLs due to the thinner layers being used. 2) channel hole critical dimension (CD) variation becomes problematic because the additional mold stack height aggravates uniformity, thereby producing WL resistance variation. Consequently, read and program performance degradation is inevitable, furthermore their optimization becomes more challenging.

High performance and low power FIR filter design based on sharing multiplication

We present a high performance and low power FIR filter design, which is based on computation sharing multiplier (CSHM). CSHM specifically targets computation re-use in vector-scalar products and is effectively used in our FIR filter design. Efficient circuit level techniques: a new carry select adder and conditional capture flip-flop (CCFF), are also used to further improve power and performance. The proposed FIR filter architecture was implemented in 0.25 μm technology. Experimental results on a 10 tap low pass CSHM FIR filter show speed and power improvement of 19% and 17%, respectively, with respect to an FIR filter based on Wallace tree multiplier.

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die size to lower cost and to improve performance. However, the previously used node-shrinking methodology is facing challenges due to increased cell-to-cell interference and patterning difficulties caused by decreasing dimension. To overcome these limitations, 3D-stacking technology has been developed. As a result of long and focused research in 3D stacking technology, we succeed in developing 128 Gb 3b/cell Vertical NAND with 32 stack WL layers for the first time, which is the smallest 128 Gb NAND Flash. The die size is 68.9 mm 2, program time is 700 us and I/O rate is 1 Gb/s.

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate

Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as smaller tPROG, lower power consumption and longer endurance. For many years, every effort has been made to shrink die size to lower cost and to improve performance. However, the previously used node-shrinking methodology is facing challenges due to increased cell-to-cell interference and patterning difficulties caused by decreasing dimension. To overcome these limitations, 3D-stacking technology has been developed. As a result of long and focused research in 3D stacking technology, 128Gb 2b/cell device with 24 stack WL layers was announced in 2014 [1].

Low power adder with adaptive supply voltage

Demands for the low power VLSI have been pushing the development of aggressive design methodologies to reduce the power consumption drastically. To meet the growing demand, we propose a low power adder, which adoptively selects supply voltages based on the input vector patterns. We prototyped a 32-bit Ripple Carry Adder and analyzed the power consumption and performance in details. Results show 29% improvement in power consumption over a conventional ripple carry adder with comparable performance.

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory

The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In the era of big data, storage devices with versatile characteristics are required for ultra-fast processing, higher capacity storage, lower cost, and lower power operation. SSDs employing 3D NAND are a promising to meet these requirements. Since the introduction of 3D NAND technology to marketplace in 2014 [1], the memory array size has nearly doubled every year [2,3]. To continue scaling 3D NAND array density, it is essential to scale down vertically to minimize total mold height. However, vertical scaling results in critical problems such as increasing WL capacitance and non-uniformity of stacked WLs due to variation in the channel hole diameter. To tackle these issues, this work proposes schemes for programming speed improvement and power reduction, and on-chip processing algorithms for error correction.

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers

A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and variations are discussed. To enhance performance, reverse read scheme and variable-pulse scheme are presented to cope with nonuniform WL characteristics. For improved performance, dual state machine architecture is proposed to achieve optimal timing for BL and WL, respectively. Also, to maintain robust IO driver strength against PVT variations, an embedded ZQ calibration technique with temperature compensation is introduced. The chip, fabricated in a third generation of V-NAND technology, achieved a density of 2.6 Gb/mm2 with 53.2 MB/s of program throughput.

Hardware architecture and VLSI implementation of a low-power high-performance polyphase channelizer with applications to subband adaptive filtering

The polyphase channelizer is an important component of a subband adaptive filtering system. This paper presents an efficient hardware architecture and VLSI implementation of a low-power high-performance polyphase channelizer, integrating optimizations at algorithmic, architectural and circuit level. At the algorithm level, a computationally efficient structure is derived. Tradeoffs between hardware complexity and system performance are explored during the fixed-point modeling of the system. A computational complexity reduction technique is also employed to reduce the complexity of the hardware architecture. Circuit-level optimizations, including an efficient commutator implementation, dual-VDD scheme and novel level-converting flip-flops, are also integrated. Simulation results show that the design consumes 352 mW power with system throughput of 480 million samples per second (MSPS). A test chip has been submitted for fabrication to validate the proposed hardware architecture and VLSI design techniques.