Yasuo Murakuki
Panasonic
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Publication
Featured researches published by Yasuo Murakuki.
international solid-state circuits conference | 2004
Kunisato Yamaoka; Shunichi Iwanari; Yasuo Murakuki; Hiroshige Hirano; Masahiko Sakagami; Tetsuji Nakakuma; Takashi Miki; Yasushi Gohou
A 1T1C embedded FeRAM operates at an ultra low voltage of 0.9 V with 550 ns access even after 10 years of imprint degradation. The ultra low voltage operation and high-reliability characteristics are attained by using a reference-voltage scheme and a multi-layer shielded bit-line structure.
symposium on vlsi circuits | 2004
Hiroshigc Hirano; Masahiko Sakagami; Kunisato Yamaoka; Tetsuji Nakakuma; Shunichi Iwanari; Yasuo Murakuki; Takashi Miki; Yasushi Gohou; Eiji Fujii
We have successfully developed high density and low power embedded 1Mbit FeRAM. Low operating voltage of 1.5V with ferroelectric capacitor which operates at 0.75V was realized by using technology of (1) non-driven plate scheme with non-refresh operation and (2) selected driven bit-line scheme. The memory core size is reduced down to 53% and the power consumption is reduced to approximately one-fiftieth compared with those of the conventional scheme.
Archive | 2003
Kunisato Yamaoka; Hiroshige Hirano; Yasuo Murakuki
Archive | 2003
Yasuo Murakuki; Hiroshige Hirano
Archive | 2009
Yoshiaki Nakao; Yasushi Gohou; Shunichi Iwanari; Masanori Matsuura; Yasuo Murakuki
Archive | 2003
Yasuo Murakuki
Archive | 2008
Yoshiaki Nakao; Yasushi Gohou; Shunichi Iwanari; Yasuo Murakuki; Masanori Matsuura
Archive | 2005
Kunisato Yamaoka; Hiroshige Hirano; Yasushi Gohou; Shunichi Iwanari; Yasuo Murakuki; Masahiko Sakagami; Tetsuji Nakakuma; Takashi Miki
Archive | 2006
Kunisato Yamaoka; Yasuo Murakuki
Technical report of IEICE. SDM | 2004
Hiroshige Hirano; Masahiko Sakagami; Kunisato Yamaoka; Tetsuji Nakakuma; Shunichi Iwanari; Yasuo Murakuki; Takashi Miki; Yasushi Gohou; Eiji Fujii
