Shunichi Iwanari

A 0.9 V 1T1C SBT-based embedded non-volatile FeRAM with a reference voltage scheme and multi-layer shielded bit-line structure

A 1T1C embedded FeRAM operates at an ultra low voltage of 0.9 V with 550 ns access even after 10 years of imprint degradation. The ultra low voltage operation and high-reliability characteristics are attained by using a reference-voltage scheme and a multi-layer shielded bit-line structure.

High density and low power nonvolatile FeRAM with non-driven plate and selected driven bit-line scheme

We have successfully developed high density and low power embedded 1Mbit FeRAM. Low operating voltage of 1.5V with ferroelectric capacitor which operates at 0.75V was realized by using technology of (1) non-driven plate scheme with non-refresh operation and (2) selected driven bit-line scheme. The memory core size is reduced down to 53% and the power consumption is reduced to approximately one-fiftieth compared with those of the conventional scheme.