Ying-Keung Leung

In 0.53 Ga 0.47 As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

In_0.53Ga_0.47As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In_0.53Ga_0.47As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS~95 mV/dec., I_on/I_off ~10⁵, DIBL ~51 mV/V at V_ds = 0.5V for L_g=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μ_EF = 1837 cm²/V-s with EOT ~ 0.9 nm) is among the highest values reported for surface channel In_0.53Ga_0.47As MOSFETs.

Device trends and implications on circuit design in advanced CMOS technologies

To conciliate scaling-driven fundamental material limitations with industry evolution requirements, flexible CMOS technologies and tighter interaction between process development and circuit/system design are needed to efficiently realize systems on a chip (SoC). This paper discusses issues associated with power supply scaling, performance-leakage power optimization including dynamic body/well bias, gate dielectric scaling, mobility enhancement by strained-Si, SRAM process and design interactions, digital and analog device tradeoffs, and HV I/O considerations in advanced CMOS technologies.