Yoshiyasu Doi

A Zero-IF 60 GHz 65 nm CMOS Transceiver With Direct BPSK Modulation Demonstrating up to 6 Gb/s Data Rates Over a 2 m Wireless Link

This paper presents a directly modulated, 60 GHz zero-IF transceiver architecture suitable for single-carrier, low-power, multi-gigabit wireless links in nanoscale CMOS technologies. This mm-wave front end architecture requires no upconversion of the baseband signals in the transmitter and no analog-to-digital conversion in the receiver, thus minimizing system complexity and power consumption. All circuit blocks are realized using sub-1.0 V topologies, that feature only a single high-frequency transistor between the supply and ground, and which are scalable to future 45 nm, 32 nm, and 22 nm CMOS nodes. The transceiver is fabricated in a 65 nm CMOS process with a digital back-end. It includes a receiver with 14.7 dB gain and 5.6 dB noise figure, a 60 GHz LO distribution tree, a 69 GHz static frequency divider, and a direct BPSK modulator operating over the 55-65 GHz band at data rates exceeding 6 Gb/s. With both the transmitter and the receiver turned on, the chip consumes 374 mW from 1.2 V which reduces to 232 mW for a 1.0 V supply. It occupies 1.28 times 0.81 mm2. The transceiver and its building blocks were characterized over temperature up to 85^deg C and for power supplies down to 1 V. A manufacturability study of 60 GHz radio circuits is presented with measurements of transistors, the low-noise amplifier, and the receiver on slow, typical, and fast process splits. The transceiver architecture and performance were validated in a 1-6 Gb/s 2-meter wireless transmit-receive link over the 55-64 GHz range.

A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.

A Single-40 Gb/s Dual-20 Gb/s Serializer IC With SFI-5.2 Interface in 65 nm CMOS

This paper presents a 40 Gb/s serializer IC in 65 nm bulk CMOS technology. The IC has an SFI5.2-compliant 10 Gb/s input interface and supports two different output modes, single 40 Gb/s for OC-768 VSR and dual 20 Gb/s for DQPSK. The IC is evaluated on a PCB and error-free operation is confirmed. The chip consumes 1.8 W for the 40 G mode, and 1.6 W for the 20 G mode from 1.2 V and 3.3 V power supplies.

5 Gb/s bidirectional balanced-line link compliant with plesiochronous clocking

A 6 ns-latency 12 mW 5 Gb/s bidirectional link for short-haul (<5 m) balanced lines uses an on-chip switched-capacitor hybrid with echo-canceling capability. The clock-recovery circuit, based on a phase interpolator, makes the link tolerant to a 100 ppm difference between the frequencies of the transmit and receive clocks.

A zero-IF 60GHz transceiver in 65nm CMOS with ≫ 3.5Gb/s links

This paper presents a 1.2 V 60 GHz zero-IF transceiver fabricated in a 65 nm CMOS process with a digital back-end. The chip includes a receiver with 14.7 dB gain, a low 5.6 dB noise figure, a 60 GHz LO distribution tree, a 64 GHz static frequency divider, and a direct BPSK modulator operating over the 55-65 GHz band at data rates exceeding 3.5 Gb/s. The chip consumes 374 mW (232 mW) from 1.2 V (1.0 V) and occupies 1.28 times 0.81 mm2. The transceiver was characterized over temperature up to 85degC and for power supplies down to 1 V. A manufacturability study of 60 GHz radio circuits is presented with measurements of transistors, the low-noise amplifier, and the receiver on typical and fast process splits. The transceiver performance is demonstrated using a 3.5 Gb/s 2-meter wireless transmit-receive link over the 55-64 GHz range.

A CMOS multi-channel 10Gb/s transceiver

A quad 10Gb/s transceiver in 0.11/spl mu/m CMOS communicates electric signals over balanced copper media. The transceiver uses a single 1.2V power supply and dissipates 415mW per channel. One PLL supplies a reference clock to two transmitter channels and two receiver channels. The transceiver contains analog front ends, clock recovery units, and 312MHz parallel interfaces.

A 5Gb/s transceiver with an ADC-based feedforward CDR and CMA adaptive equalizer in 65nm CMOS

A high bandwidth and a robust performance are demanded in the consumer market applications. An ADC-based transceiver satisfies these demands and enables power/area scaling with process [1,2]. We developed and tested a spread-spectrum-clocking (SSC) compliant 5-Gb/s transceiver in 65-nm CMOS. The receiver uses an ADC-based front-end that samples the incoming signal without adjusting the phase relation between the sampling clock and the signal, hence eliminating the need for phase control of the sampling clock (Fig. 8.7.1). The phase tracking of the incoming signal and the data decision are performed entirely in the numerical domain without generating physical sampling-clock phases. An adaptive digital FFE (feed-forward equalizer) compensates for a channel loss up to 15dB at 2.5 GHz, using an on-chip adaptation controller based on CMA (constant-modulus algorithm). The CDR operated with BER less than 1E-12 when the transmitter and receiver clock signals were independently SSC-modulated at a modulation frequency of 30 kHz with a frequency deviation of 0 to −5000ppm.

A 3 Watt 39.8–44.6 Gb/s Dual-Mode SFI5.2 SerDes Chip Set in 65 nm CMOS

A Dual-mode 2 ×21.5-22.3 Gb/s DQPSK or 1 × 39.8-44.6 Gb/s NRZ to 4 × 9.95-11.2 Gb/s SFI5.2-compliant two-chip SerDes for a family of 40 Gb/s optical transponders has been fabricated in 65 nm 12-metal CMOS. By demultiplexing to 16 × 2.5 Gb/s internally, all logic and testability functions could be implemented in standard-cell CMOS, resulting in total power consumption of 3 W, 75 % lower than commercial BiCMOS SFI5 40 Gb/s SerDes ICs. Chip area is 4 × 4 mm, and the ICs are flip-chip mounted into a quad flat-pack package.

5-6.4 Gbps 12 channel transceiver with pre-emphasis and equalizer

A 5 Gbps to 6.4 Gbps transceiver consists of a parallel 12-channel transmitter (Tx), 12-channel receiver (Rx), clock generators based on LC-VCO PLLs, and a clock recovery unit. The Tx has a 5-tap pre-emphasis filter, and the Rx has an equalizer with intersymbol interference (ISI) monitor. Monitoring the ISI enables a fine adjustment of the loss compensation. The pre-emphasis filter in the Tx and the equalizer in the Rx can compensate for a transmission loss of up to 20 dB and 15 dB at 6.4 Gbps, respectively. The areas of the Tx and Rx channels including the PLLs are both 3.92 mm/sup 2/. The transmitter dissipates 150 mW/channel at 6.4 Gbps when compensating for a loss of 20 dB, the receiver 90 mW/channel when compensating for 15 dB loss.

A 56-Gb/s receiver front-end with a CTLE and 1-tap DFE in 20-nm CMOS

A 56-Gb/s receiver front-end suited for baud-rate clock recovery is demonstrated in 20-nm CMOS. Sharing the comparators for the data decision and phase detection minimizes the number of comparators in the front-end and reduces the power consumption. The front-end has a continuous-time linear equalizer followed by a 1-tap speculative decision-feedback equalizer. The front-end operates at 56Gb/s with a bit error rate of less than 10-12 with a 0.4UI margin in the bathtub curve. It occupies 0.27mm2 and consumes 177mW of power from a 0.9-V supply.