Yves Baeyens

A 5-b 10-GSample/s a/D converter for 10-gb/s optical receivers

A 5-bit 10-Gsample/s A/D converter (ADC) is fabricated in a SiGe BiCMOS process to digitally compensate the signal distortion in a 10-Gb/s optical receiver. A fully differential, flash-type ADC has a wideband track-and-hold amplifier to mitigate the timing skew, followed by high-speed comparators with very small metastability error. It achieves a 4.1 effective bits at low input frequencies and 2.8 effective bits at full-scale 4.9-GHz input signal at 10-Gsample/s.

Highly Efficient Harmonically Tuned InP D-HBT Push-Push Oscillators Operating up to 287 GHz

Integrated push-push oscillators, achieving high output power at 210, 235 and 287 GHz, were realized in a 0.5 mum emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with a maximum oscillation frequency fmax of 335 GHz and a breakdown voltage (Vbceo) of 4 V. The oscillators are based on a balanced Colpitts topology in which a strong second harmonic signal is generated by combining the differential signals at the collector and by reactively tuning the output impedance of the oscillator using a shorted stub. Three oscillators were realized using this topology. A high-power output signal of more then 0 dBm is obtained for oscillators operating at 210 and 232 GHz, an improvement of 5 dB compared to the output power measured on an identical push-push oscillator without 2nd harmonic tuning. Close to -3 dBm output power is obtained at an output frequency of 280 GHz by further reducing the resonator length. By reducing the current, a maximum output frequency of 287 GHz is obtained.

10 Gb/s soliton generation for ULH transmission using a wideband GaAs pHemt amplifier

A novel technique of generating 10 Gb/s soliton data using a wideband GaAs pHemt amplifier is demonstrated and applied in a 10G transmission experiment. Bit-error-rate better than FEC threshold is achieved over 4000km.

A Broadband Millimeter-Wave Low-Noise Amplifier in SiGe BiCMOS Technology

A broadband millimeter-wave low-noise amplifier (LNA) operating at V-band (50 GHz to 75 GHz) is presented. The circuit is fabricated with 0.18 mum SiGe BiCMOS technology. The matching networks are synthesized with microstrip transmission lines. The LNA achieves a maximum transducer power gain |S21| of ~16 dB, a noise figure of 6.8 dB at 62 GHz, and a 3-dB bandwidth from 54 GHz to 70 GHz. The output return loss is better than 12 dB from 59 GHz to 72 GHz. The reverse isolation |S12| is better than 40 dB over the 3-dB bandwidth. The LNA draws 9.6 mA from a 2.5 V supply.

A 50GS/s Distributed T/H Amplifier in 0.18μm SiGe BiCMOS

A 3-stage distributed T/H amplifier (DTHA) is presented for high-bit-rate optical receivers and millimeter-wave radios. Distributed topology enhances the bandwidth of the DTHA to >42GHz in track mode. The DTHA achieves 2-tone SFDR of 46dB with 15GHz input signal. The 1.47mm2 chip designed in a 0.18μm SiGe BiCMOS process dissipates 640mW.

CMOS-Based MEMS Mirror Driver for Maskless Lithography Systems

This paper presents a low-power MEMS mirror driver for maskless lithography systems. The CMOS driver consists of a 512 x 128 analog memory cell array to drive the position of 512 x 128 MEMS mirror array. The row driver employs an analog de-multiplexing architecture, which eliminates the need for precise matching among multiple row driver characteristics. It uses two parallel high-speed 8-b DACs with 128 sample-and-hold amplifiers (SHAs) to write a multilevel data into memory cells. To verify its functionality, a prototype test chip is implemented with a self-calibration technique to compensate the cell leakage. The driver chip is implemented in a 0.35-mum digital CMOS process. It consumes a 120 mA power with 3/3.6 V supplies.

Recent Advances in III-V Electronics

Compound III-V semiconductor circuits promise fast and power efficient analog, digital and mixed-mode applications. This paper provides an overview of recent advances in high speed III-V compound devices and integrated circuits for high capacity wireless and optic fiber communications. Several critical compound semiconductor ASIC technologies and their unique performance advantages over prevailing silicon CMOS and SiGe technologies will be illustrated