Akira Hiroki

MOS type semiconductor device having a low concentration impurity diffusion region

Method for forming complementary MOS device having asymmetric region in channel region

Method of proudcing a MIS transistor

MIS transistor with gate sidewall insulating layer

Complementary semiconductor device and method for producing the same

LDD FET with polysilicon sidewalls

MOS type semiconductor device having an impurity diffusion layer with a nonuniform impurity concentration profile in a channel region

Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device

MOS transistor and its fabricating method

MOS type semiconductor device having an impurity diffusion layer