Allison Holbrook

METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FOM CMOS GATES HAVING A HIGH-K GATE DIELECTRIC AND RELATED STRUCTURE

In-situ etch of BARC layer during formation of local interconnects

Method for making an ultra thin FDSOI device with improved short-channel performance

Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process

Method for integrating a high-k gate dielectric in a transistor fabrication process

Fabrication of shallow trench isolation structures with rounded corner and self-aligned gate

Method for fabricating T-shaped transistor gate

Fully depleted SOI device with tungsten damascene contacts and method of forming same

Self-aligned gate semiconductor

CMOS gates formed by integrating metals having different work functions and having a high-k gate dielectric