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Andreas Hellmich

Advanced Micro Devices

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Publication

Featured researches published by Andreas Hellmich.

Archive | 2006

Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch process

Andreas Hellmich; Gunter Grasshoff; Fernando Koch; Andy Wei; Thorsten Kammler

Archive | 2006

Verfahren zur Herstellung eingebetteter Drain/Source-Gebiete auf der Grundlage eines Prozesses zum kombinierten Ätzen von Abstandshaltern und einer Aussparung

Andreas Hellmich; Gunter Grasshoff; Fernando Koch; Andy Wei; Thorsten Kammler

Archive | 2009

TRANSISTOR HAVING A STRAINED CHANNEL REGION CAUSED BY HYDROGEN-INDUCED LATTICE DEFORMATION

Sven Beyer; Andreas Hellmich; Gunter Grasshoff; Hans-Juergen Engelmann

Archive | 2010

Gate electrodes of a semiconductor device made by a hard mask and double exposure in connection with a reduction in size spacer

Sven Beyer; Klaus Gebauer; Andreas Hellmich; Steffen Laufer

Archive | 2010

A process for the production of gate electrodes of a semiconductor device made by a hard mask and double exposure in connection with a reduction in size spacer

Sven Beyer; Klaus Gebauer; Andreas Hellmich; Steffen Laufer

Archive | 2010

Gateelektroden eines Halbleiterbauelements, die durch eine Hartmaske und Doppelbelichtung in Verbindung mit einem Größenreduzierungsabstandshalter hergestellt sind Gate electrodes of a semiconductor device made by a hard mask and double exposure in connection with a reduction in size spacer

Sven Beyer; Klaus Gebauer; Andreas Hellmich; Steffen Laufer

Archive | 2010

Feldeffekt-Transistor mit einem verformten Kanalgebiet, das durch eine Wasserstoff induzierte Gitterdeformation hervorgerufen wird und Verfahren zum Einbringen des Wasserstoffes

Sven Beyer; Andreas Hellmich; Gunter Grasshoff; Hans-Juergen Engelmann

Archive | 2010

Verfahren zur Herstellung von Gateelektroden eines Halbleiterbauelements, die durch eine Hartmaske und Doppelbelichtung in Verbindung mit einem Größenreduzierungsabstandshalter hergestellt sind Process for the preparation of gate electrode of a semiconductor device made by a hard mask and double exposure in connection with a reduction in size spacer

Sven Beyer; Klaus Gebauer; Andreas Hellmich; Steffen Laufer

Archive | 2009

A method for processing a gate electrode material system while preserving the integrity of a gate stack with large ε passivation by means of an oxygen plasma, and transistor device

Sven Beyer; Rick Carter; Andreas Hellmich; Berthold Reimer

Archive | 2009

Preserve the integrity of a gate stack with large ε by passivation using an oxygen plasma

Sven Beyer; Rick Carter; Andreas Hellmich; Berthold Reimer

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Collaboration

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Gunter Grasshoff

Advanced Micro Devices

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Sven Beyer

GlobalFoundries

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Fernando Koch

Advanced Micro Devices

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Thorsten Kammler

Advanced Micro Devices

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Andy Wei

GlobalFoundries

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Berthold Reimer

GlobalFoundries

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Klaus Gebauer

GlobalFoundries

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Rick Carter

GlobalFoundries

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Steffen Laufer

GlobalFoundries

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Andy Wei

GlobalFoundries

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