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Dive into the research topics where Sven Beyer is active.

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Featured researches published by Sven Beyer.


international conference on ultimate integration on silicon | 2013

Advanced gate stack work function optimization and substrate dependent strain interactions on HKMG first stacks for 28nm VLSI ultra low power technologies

Jan Hoentschel; Shiang Yang Ong; Torben Balzer; Nicolas Sassiat; Ran Yan; Tom Herrmann; Stefan Flachowsky; Carsten Grass; Sven Beyer; Oliver Kallensee; Yu-Yin Lin; Adelina Shickova; Armin Muehlhoff; Claudia Kretzschmar; Joerg Winkler; Maciej Wiatr; Manfred Horstmann

Different gate stack optimizations and substrate dependent strain interactions have been studied and implemented in a cost-effective 28nm VLSI ultra low power technology. Drive current improvements for NFET I<sub>D,SAT</sub> = 870μA/μm and PFET I<sub>D,SAT</sub> = 465μA/μm at I<sub>OFF</sub> = 1nA/μm and V<sub>DS</sub> = 1V can be demonstrated by using compressive and tensile contact layers on (100)/<;110> substrates. Work function optimizations result in a proper threshold voltage adjustment and improved reliability behavior for 28nm ultra low power technologies. SOC level test design implementations show consistent yield as well as improved performance.


Archive | 2006

FORMATION OF SILICIDED SURFACES FOR SILICON/CARBON SOURCE/DRAIN REGIONS

Thorsten Kammler; Patrick Press; Rolf Stephan; Sven Beyer


Archive | 2010

Threshold adjustment of transistors including high-k metal gate electrode structures comprising an intermediate etch stop layer

Sven Beyer; Markus Lenski; Richard Carter; Klaus Hempel


Archive | 2010

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED AT DIFFERENT PROCESS STAGES OF A SEMICONDUCTOR DEVICE

Jan Hoentschel; Sven Beyer; Thilo Scheiper; Uwe Griebenow


Archive | 2010

Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning

Richard Carter; Falk Graetsch; Martin Trentzsch; Sven Beyer; Berthold Reimer; Robert Binder; Boris Bayha


Archive | 2009

Multiple gate transistor having homogenously silicided fin end portions

Sven Beyer; Patrick Press; Rainer Giedigkeit; Jan Hoentschel


Archive | 2010

ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUSING A GATE DIELECTRIC CAP LAYER MATERIAL PRIOR TO GATE DIELECTRIC STABILIZATION

Richard Carter; Martin Trentzsch; Sven Beyer; Rohit Pal


Archive | 2013

Transistors Comprising High-K Metal Gate Electrode Structures and Embedded Strain-Inducing Semiconductor Alloys Formed in a Late Stage

Uwe Griebenow; Jan Hoentschel; Thilo Scheiper; Sven Beyer


Archive | 2010

Strain engineering in three-dimensional transistors based on globally strained semiconductor base layers

Jan Hoentschel; Sven Beyer; Uwe Griebenow


Archive | 2010

Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum

Richard Carter; Sven Beyer; Joachim Metzger; Robert Binder

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