Angelo Scuderi

A lumped scalable model for silicon integrated spiral inductors

A lumped scalable model for spiral inductors in silicon bipolar technology has been developed. The effect of three different cross sections on inductor performance was first investigated by comparing experimental measurements. Using both the results of this analysis and three-dimensional electromagnetic simulation guidelines, several circular inductors were integrated on a radial patterned ground shield for model validation purposes. The model employs a novel equation for series resistance with only one fitting parameter extracted from experimental measurements. All other model elements were related to technological and geometrical data by using rigorous analytical equations. The model was validated using one- and two-port measured performance parameters of 45 integrated inductors, and excellent agreement was found for all considered geometries up to frequencies well above self-resonance.

Analysis and modeling of layout scaling in silicon integrated stacked transformers

The analysis and modeling of monolithic stacked transformers fabricated in a high-speed silicon bipolar technology is addressed. On-wafer experimental measurements are employed to investigate the effect of layout scaling on transformer performance parameters (i.e., self-resonance frequency, magnetic coupling coefficient, and insertion loss). Based on this analysis, a wideband lumped model is developed, whose parameters are related to layout and technological data through closed-form expressions. Model accuracy is demonstrated by comparing simulated and measured S-parameters, coil inductance, magnetic coupling coefficient, and maximum available gain of several transformers with scaled layout geometry. The self-resonance frequency is also employed as a figure-of-merit to demonstrate model accuracy at very high frequency.

A low-phase-noise voltage-controlled oscillator for 17-GHz applications

A silicon bipolar voltage-controlled oscillator (VCO) for 17-GHz applications is presented. The VCO is composed of a core oscillating at 9GHz followed by a frequency doubler. It adopts a transformer-based topology to obtain both wide tuning range and low noise performance. The VCO exhibits a tuning range of 4.1GHz from 16.4 to 20.5GHz and a phase noise as low as -109dBc/Hz at a 1-MHz frequency offset from a carrier of 18.5GHz.

Sub-nH inductor modeling for RFIC design

This letter presents the modeling of sub-nH radial patterned ground shield circular inductors fabricated in a silicon bipolar technology for radio frequency applications. Based on both electromagnetic simulations and experimental measurements, the well-known current sheet expression for circular spirals is revised and modified to improve its accuracy at lower inductance values. The proposed expression is also extended to inductors with polygonal geometries showing significant improvements with respect to the state-of-the-art. Finally, the original and modified expressions are employed in a lumped scalable model for silicon spiral inductors. Comparisons with measured data revealed that the modified expression allows error reductions as large as 20% with respect to the original one, on both inductance and quality factor simulations.

A scalable model for silicon spiral inductors

A simple model for monolithic spiral inductors on silicon substrates is presented. Each lumped element of the model is related to the layout geometry by analytical equations. Moreover, a novel equation for series resistance is also proposed. The model was validated by comparisons with on-wafer measurements over a wide range of geometrical layout parameters.

A silicon bipolar technology for high-efficiency power applications up to C-band

This paper presents the large-signal characterization and modeling of a 0.8-/spl mu/m 46-GHz-f/sub T/ silicon bipolar technology for RF power applications up to C-band. A series of devices with optimized layout and vertical structure was fabricated for on-wafer load-pull testing at 1.9 GHz, 2.4 GHz, and 5.2 GHz. Under continuous-wave operation, a 56% power-added efficiency and 11-dB large-signal gain were achieved at a 22-dBm output power level by an 80-/spl mu/m emitter length device (180-/spl mu/m/sup 2/ emitter area) operating at 5.2 GHz with a 2.7-V supply voltage. A modified Gummel-Poon model was extracted from DC and multibias S-parameter measurements and validated by comparisons with load-pull results. Close agreement was found between simulated and measured large-signal performance up to power levels well above the 1-dB compression point.

Integrated Inductors and Transformers: Characterization, Design and Modeling for RF and MM-Wave Applications

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Experimental comparison of substrate structures for inductors and transformers

An experimental comparison of the substrate structures for silicon inductive devices is proposed. On-wafer measurements for both inductors and stacked transformers revealed that better performance is achieved by exploiting a n/sup +/-doped buried layer as a patterned ground shield. The proposed solution increases inductor quality factor and allows a wide operative bandwidth for transformers to be achieved, as well. Moreover, owing to a well-defined RF ground reference, cross-talk phenomena are inherently reduced. Finally, the buried layer patterned ground shield highly simplifies substrate modeling and allows accurate electromagnetic simulations to be easily carried out.

A 18-GHz silicon bipolar VCO with transformer-based resonator

A silicon bipolar voltage-controlled oscillator for 17-GHz ISM band is presented. The VCO is composed of a core oscillating at 9 GHz followed by a frequency doubler. It adopts a transformer-based topology to obtain both wide tuning range and low noise performance. The VCO exhibits a tuning range of 4.1 GHz from 16.4 to 20.5 GHz and a phase noise as low as -109 dBc/Hz at a 1-MHz frequency offset from a carrier of 18.5 GHz. To design and optimize the resonator, a lumped scalable model for differentially driven inductors and transformers was used. This model is presented and validated up to 20 GHz by comparison with experimental data

Analysis and modeling of thick-metal spiral inductors on silicon

In this paper, the analysis and modeling of thick-metal spiral inductors are addressed. The actual improvements of metal thickening in terms of quality factor are evaluated and related to skin and proximity effects. The inductance decrease due to metal thickening is also investigated and modeled using a modified current-sheet expression. The proposed formula achieves higher accuracy compared to the original one revealing errors below 5% even for thickness-to-width ratio up to 2.5.