Avtar Singh

Pressure induced structural transformation in thulium monotelluride

Abstract Thulium monotelluride undergoes a structural transformation at 15 GPa from NaCl-type structure to a hexagonal structure with unit cell dimensions: a = 4.07 A and c = 6.84 A. The high pressure diffraction pattern is explained reasonably well by anti-NiAs-type structure. The volume change associated with the transformation is 3.8 per cent.

Estimation of the uniaxial stress component in a diamond anvil high pressure cell

Abstract The lattice strains in sodium chloride up to 1 GPa measured with a diamond anvil cell have been analyzed to detect the presence of the uniaxial stress component by fitting a theoretical expression relevant for the diamond anvil geometry.

Study of ground plane FD SOI structures at 25 nm

Silicon-On-Insulator (SOI) technology is a potential technology for future VLSI system implementations. SOI technology offers MOS devices with suppressed CMOS latch-up, higher packing density and higher speed. SOI MOSFET structures offer many advantages over conventional Bulk MOS transistor. In this paper, ground plane effect on FD SOI MOSFET has been discussed. There are two ways to insert the ground plane in FD SOI MOSFET structure, ground plane in substrate and ground plane in BOX. On the basis of ION/IOFF both structures are compared in this paper. GPB structure has high on current and off current ratio in comparison to GPS Structure. Further partial and continuous length ground plane are discussed and its effect on current driving capability and leakage current are studied. In last with the help of Subthreshold curve concluded that the leakage current is minimum in the GPB based structures. The work is carried out at 25 nm technology. The design & Simulations are done using ATLAS framework of SILVACO TCAD tool.

Use of energy dispersive method with tungsten carbide opposed anvil high pressure set-up

The use of energy dispersive method has been discussed to record the X-ray diffraction data from a tungsten carbide opposed anvil high pressure set-up. It is pointed out that a proper collimation of the incident and the diffracted beams can eliminate the scattering from the gasket material. This results in an appreciable improvement in the quality of the recorded diffraction data. The choice of the various parameters has been discussed. The data on sodium chloride are presented in support of this analysis.

Volume compression of CuCI to 7 GPa

The unit cell volume of CuCl as a function of pressure has been measured up to 7 GPa (giga Pascals). The compression behaviour is quite normal. The analysis of the compression data gives 40·3±1·5 GPa for the bulk modulus of the zinc blende phase. The zinc blende phase transforms to a tetragonal phase at 5·5 GPa, the volume change associated with the transformation being 12%. A comparison of the bulk modulus of CuCl with those of CuBr and CuI indicates that an anomaly exists in this group.