B. Perez-Verdu

High-level synthesis of switched-capacitor, switched-current and continuous-time /spl Sigma//spl Delta/ modulators using SIMULINK-based time-domain behavioral models

This paper presents a high-level synthesis tool for /spl Sigma//spl Delta/ modulators (/spl Sigma//spl Delta/Ms) that combines an accurate SIMULINK-based time-domain behavioral simulator with a statistical optimization core. Three different circuit techniques for the modulator implementation are considered: switched-capacitor, switched-current and continuous-time. The behavioral models of these circuits, that take into account the most critical limiting factors, have been incorporated into the SIMULINK environment by using S-function blocks, which drastically increase the computational efficiency. The precision of these models has been validated by electrical simulations using HSPICE and experimental measurements from several silicon prototypes. The combination of high accuracy, short CPU time and interoperability of different circuit models together with the efficiency of the optimization engine makes the proposed tool an advantageous alternative for /spl Sigma//spl Delta/M synthesis. The implementation on the well-known MATLAB/SIMULINK platform brings numerous advantages in terms of data manipulation, processing capabilities, flexibility and simulation with other electronic subsystems. Moreover, this is the first tool dealing with the synthesis of /spl Sigma//spl Delta/Ms using both discrete-time and continuous-time circuit techniques.

A vertically integrated tool for automated design of /spl Sigma//spl Delta/ modulators

We present a tool that starting from high-level specifications of switched-capacitor (SC) /spl Sigma//spl Delta/ modulators calculates optimum specifications for their building blocks and then optimum sizes for the block schematics. At both design levels, optimization is performed using statistical techniques to enable global design and innovative heuristics for increased computer efficiency as compared with conventional statistical optimization. The tool uses an equation-based approach at the modulator level, a simulation-based approach at the cell level, and incorporates an advanced /spl Sigma//spl Delta/ behavioral simulator for monitoring and design space exploration. We include measurements taken from two silicon prototypes: (1) a 16 b @ 16 kHz output rate second-order /spl Sigma//spl Delta/ modulator; and (2) a 17 b @ 40 kHz output rate fourth-order /spl Sigma//spl Delta/ modulator. Both use SC fully differential circuits and were designed using the proposed tool and manufactured in a 1.2 /spl mu/m CMOS double-metal double-poly technology. >

Modeling opamp-induced harmonic distortion for switched-capacitor /spl Sigma//spl Delta/ modulator design

This communication reports a new modeling of opamp-induced harmonic distortion in SC /spl Sigma//spl Delta/ modulators, which is aimed at the optimum design of this kind of circuit for high-performance applications. We analyze incomplete transfer of charge in a SC integrator and use power expansion and nonlinear fitting to obtain analytical models to represent harmonic distortion as function of the opamp finite gain-bandwidth (GB), slew-rate (SR) and nonlinear DC gain. Calculated models apply for all modulator architectures where harmonic distortion is dominated by the first integrator in the chain. We show that results provided by the new analytical models fit well to that obtained by simulation in time domain and have accuracy levels much larger than that provided by previously reported modeling approaches.<<ETX>>

Chaos from switched-capacitor circuits: Discrete maps

A special-purpose analog computer made of switched-capacitor circuits is presented for analyzing chaos and bifurcation phenomena in nonlinear discrete dynamical systems modeled by discrete maps xn + 1= f(xn) Experimental results are given for four switched-capacitor circuits described by well-known discrete maps; namely, the logistic map, the piecewise-linear unimodal (one-hump) map, the Hénon map, and the Lozi map.

A 13-bit, 2.2-MS/s, 55-mW multibit cascade /spl Sigma//spl Delta/ modulator in CMOS 0.7-/spl mu/m single-poly technology

This paper presents a CMOS 0.7-/spl mu/m /spl Sigma//spl Delta/ modulator IC that achieves 13-bit dynamic range at 2.2 MS/s with an oversampling ratio of 16. It uses fully differential switched-capacitor circuits with a clock frequency of 35.2 MHz, and has a power consumption of 55 mW. Such a low oversampling ratio has been achieved through the combined usage of fourth-order filtering and multibit quantization. To guarantee stable operation for any input signal and/or initial condition, the fourth order shaping function has been realized using a cascade architecture with three stages; the first stage is a second-order modulator, while the others are first-order modulators-referred to as a 2-1-1/sub mb/ architecture. The quantizer of the last stage is 3 bits, while the other quantizers are single bit. The modulator architecture and coefficients have been optimized for reduced sensitivity to the errors in the 3-bit quantization process. Specifically, the 3-bit digital-to-analog converter tolerates 2.8% FS nonlinearity without significant degradation of the modulator performance. This makes the use of digital calibration unnecessary, which is a key point for reduced power consumption. We show that, for a given oversampling ratio and in the presence of 0.5% mismatch, the proposed modulator obtains a larger signal-to-noise-plus-distortion ratio than previous multibit cascade architectures. On the other hand, as compared to a 2.1.1/sub single-bit/ modulator previously designed for a mixed-signal asymmetrical digital subscriber line modem in the same technology, the modulator in this paper obtains one more bit resolution, enhances the operating frequency by a factor of two, and reduces the power consumption by a factor of four.

Fourth-order cascade SC /spl Sigma//spl Delta/ modulators: a comparative study

Fourth-order cascade /spl Sigma//spl Delta/ modulators are very well suited for IC implementation using analog sampled-data circuits because of their robust, stable operation and their capability to achieve high resolution and wide bandwidth with moderate power consumption. However, their optimum realization requires careful consideration of their performance degradations due to the hardware nonidealities. This paper presents a comparative study of the influence of finite op-amp gain and capacitor mismatch on the performance of fourth-order cascade /spl Sigma//spl Delta/ modulators realized by means of switched-capacitor circuits. It considers single-bit and multibit quantizers and draws a number of comparative remarks validated by time-domain behavioral simulations.Fourth-order cascade modulators are very well suited for IC implementation using analog sampled-data circuits because of their robust, stable operation and their capability to achieve high resolution and wide bandwidth with moderate power consumption. However, their optimum realization requires careful consideration of their performance degradations due to the hardware nonidealities. This paper presents a comparative study of the influence of finite op-amp gain and capacitor mismatch on the performance of fourth-order cascade modulators realized by means of switched-capacitor circuits. It considers singlebit and multibit quantizers and draws a number of comparative remarks validated by time-domain behavioral simulations.

A CMOS 110-dB@40-kS/s programmable-gain chopper-stabilized third-order 2-1 cascade sigma-delta Modulator for low-power high-linearity automotive sensor ASICs

This paper describes a 0.35-/spl mu/m CMOS chopper-stabilized switched-capacitor 2-1 cascade /spl Sigma//spl Delta/ modulator for automotive sensor interfaces. The modulator architecture has been selected from an exhaustive comparison among multiple topologies in terms of resolution, speed and power dissipation. To obtain a better fitting with the characteristics of different sensor outputs, the circuit can be digitally programmed to yield four input-to-output gain values (/spl times/0.5,/spl times/1,/spl times/2, and /spl times/4) and has been designed to operate within the stringent environmental conditions of automotive electronics (temperature range of -40/spl deg/C to 175/spl deg/C). In order to relax the amplifiers dynamic requirements for the different modulator input-to-output gains, switchable capacitor arrays are used for all the capacitors in the first integrator. The design of the building blocks is based on a top-down CAD methodology which combines simulation and statistical optimization at different levels of the modulator hierarchy. The circuit is clocked at 5.12 MHz and the overall power consumption is 14.7 mW from a single 3.3-V supply and occupies 5.7 mm/sup 2/ silicon area. Experimental results show a maximum SNR of 87.3 dB within a 20-kHz signal bandwidth and 90.7 dB for 10-kHz signals, and an overall DR of 110 and 113.8dB, respectively. These performance features place the reported circuit at the cutting edge of state-of-the-art high-resolution /spl Sigma//spl Delta/ modulators.

Adaptive CMOS analog circuits for 4G mobile terminals-Review and state-of-the-art survey

The fourth-generation (4G) of cellular terminals will integrate the services provided by previous generations second-generation/third-generation (2G/3G) with other applications like global positioning system (GPS), digital video broadcasting (DVB) and wireless networks, covering metropolitan (IEEE 802.16), local (IEEE 802.11) and personal (IEEE 802.15) areas. This new generation of hand-held wireless devices, also named always-best-connected systems, will require low-power and low-cost multi-standard chips, capable of operating over different co-existing communication protocols, signal conditions, battery status, etc. Moreover, the efficient implementation of these chipsets will demand for reconfigurable radio frequency (RF) and mixed-signal circuits that can adapt to the large number of specifications with minimum power dissipation at the lowest cost. Nanometer CMOS processes are expected to be the base technologies to develop 4G systems, assuring mass production at low cost through increased integration levels and extensive use of digital signal processing. However, the integration in standard CMOS of increasingly complex analog/RF parts imposes a number of challenges and trade-offs that make their design critical. These challenges are addressed in this paper through a comprehensive revision of the state-of-the-art on transceiver architectures, building blocks and design trade-offs of reconfigurable and adaptive CMOS RF and mixed-signal circuits for emerging 4G systems.

Highly Linear 2,5-V CMOS ΣΔ Modulator for ADSL+

We present a 90-dB spurious-free dynamic range sigma-delta modulator (/spl Sigma//spl Delta/M) for asymmetric digital subscriber line applications (both ADSL and ADSL+), with up to a 4.4-MS/s digital output rate. It uses a cascade (MASH) multibit architecture and has been implemented in a 2.5-V supply, 0.25-/spl mu/m CMOS process with metal-insulator-metal capacitors. The prototypes feature 78-dB dynamic range (DR) in the 30-kHz to 2.2-MHz band (ADSL+) and 85-dB DR in the 30-kHz to 1.1-MHz band (ADSL). Integral and differential nonlinearity are within /spl plusmn/0.85 and /spl plusmn/0.80 LSB/sub 14 b/, respectively. The /spl Sigma//spl Delta/ modulator and its auxiliary blocks (clock phase and reference voltage generators, and I/O buffers) dissipate 65.8 mW. Only 55 mW are dissipated in the /spl Sigma//spl Delta/ modulator.We present a 90-dB spurious-free dynamic range sigma-delta modulator M) for asymmetric digital subscriber line applications (both ADSL and ADSL ), with up to a 4.4-MS/s digital output rate. It uses a cascade (MASH) multibit architecture and has been implemented in a 2.5-V supply, 0.25- m CMOS process with metal-insulator-metal capacitors. The prototypes feature 78-dB dynamic range (DR) in the 30-kHz to 2.2-MHz band ADSL and 85-dB DR in the 30-kHz to 1.1-MHz band (ADSL). Integral and differential nonlinearity are within 0.85 and 0.80 LSB b , respectively. The modulator and its auxiliary blocks (clock phase and reference voltage generators, and I/O buffers) dissipate 65.8 mW. Only 55 mW are dissipated in the modulator.

A new nonlinear time-domain op-amp macromodel using threshold functions and digitally controlled network elements

A general-purpose nonlinear macromodel for the time-domain simulation of integrated circuit operational amplifiers (op amps), either bipolar or MOS, is presented. Three main differences exist between the macromodel and those previously reported in the literature for the time domain. First, all the op-amp nonlinearities are simulated using threshold elements and digital components, thus making them well suited for a mixed electrical/logical simulator. Secondly, the macromodel exhibits a superior performance in those cases where the op amp is driven by a large signal. Finally, the macromodel is advantageous in terms of CPU time. Several examples are included illustrating all of these advantages. The main application of this macromodel is for the accurate simulation of the analog part of a combined analog/digital integrated circuit. >