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Journal of Vacuum Science & Technology B | 1996

Process kit and wafer temperature effects on dielectric etch rate and uniformity of electrostatic chuck

Hongching Shan; Bryan Pu; Hua Gao; Kuang-Han Ke; Jenny Lewis; Michael Welch; Chandra Deshpandey

Etch rate and uniformity are two basic indicators of how rf power is coupled into the wafer. In reactive ion etch of dielectric layers, wafer temperature also appears as a key parameter, due to the innate deposition. When electrostatic chuck is introduced, we have to study and control both rf coupling and wafer temperature to maximize etch rate and minimize nonuniformity. We first review the basics of the electrostatic chuck (e‐chuck) design and operation, and check them against Applied Materials’ polyimide monopolar e‐chuck. Then a simple circuit model is developed and fitted to the experimental results. The model says to have higher etch rate, one needs to couple more energy through the wafer center. This is achieved by using a thicker insulating process kit with low dielectric constant. The uniformity study shows for a given wafer, its etch rate variation across the wafer can be divided into three sections—center, B‐field corner, and very edge of the wafer, and each section is controlled by a key param...


Journal of Vacuum Science & Technology B | 1996

MxP+: A new dielectric etcher with enabling technology, high productivity, and low cost‐of‐consumables

Hongching Shan; Evans Lee; Michael Welch; Bryan Pu; James D. Carducci; Kuang-Han Ke; Hua Gao; Paul E. Luscher; Gerard Crean; Rynn Wang; Richard Blume; James Cooper; Robert W. Wu

Dielectric etch accounts for more than half of all the dry etches used in integrated circuit (IC) fabrication, and plays a very important role in fulfilling strict requirements of volume‐manufacturing of IC circuits whose feature size is progressively decreasing. The challenge of meeting volume manufacture requirements is what MxP+ has achieved through a series of hardware and process innovations. By Pareto analysis of the wet clean time of the MxP chamber, we were able to define six major drivers to address three key issues: (1) reduce wet clean time, (2) eliminate system complexity, and (3) achieve technical excellence. Key components of the MxP+ that allow us to address them include a quartz gas distribution plate which prevents the aluminum particle formation, and the electrostatic chuck which eliminates the mechanical clamp system while reducing the particle contamination and wafer edge exclusion. The unique chamber liners of the MxP+ not only shield chamber walls, but also provided a wide process wi...


Archive | 2000

Etch method using a dielectric etch chamber with expanded process window

Jingbao Liu; Judy Wang; Takehiko Komatsu; Bryan Pu; Kenny L. Doan; Claes Bjorkman; Melody Chang; Yunsang Kim; Hongching Shan; Ruiping Wang


Archive | 2000

Support assembly with thermal expansion compensation

Gerhard Schneider; Hamid Noorbakhsh; Bryan Pu; Kaushik Vaidya; Brad L. Mays; Hung Dao; Evans Lee; Hongging Shan


Archive | 2002

Dielectric etch chamber with expanded process window

James D. Carducci; Hamid Noorbakhsh; Evans Lee; Bryan Pu; Hongching Shan; Claes Bjorkman; Siamak Salimian; Paul E. Luscher; Michael Welch


Archive | 1996

Method for etching dielectric layers with high selectivity and low microloading

Bryan Pu; Hongching Shan; Michael Welch


Archive | 2001

Adjusting DC bias voltage in plasma chamber

Hong Ching Shan; Evans Lee; Michael Welch; Robert W. Wu; Bryan Pu; Paul E. Luscher; James D. Carducci; Richard Blume


Archive | 2001

Shield or ring surrounding semiconductor workpiece in plasma chamber

Kuang-Han Ke; Bryan Pu; Hongching Shan; James C. Wang; Henry Fong; Zongyu Li; Michael Welch


Archive | 1995

Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor

Bryan Pu; Hongching Shan


Archive | 2006

Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone

Kallol Bera; Xiaoye Zhao; Kenny L. Doan; Ezra Robert Gold; Paul Brillhart; Bruno Geoffrion; Bryan Pu; Daniel J. Hoffman

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