Byeongju Park

Reliability Qualification of CoSi2 Electrical Fuse for 90Nm Technology

The reliability of CoSi2/p-poly Si electrical fuse (eFUSE) programmed by electromigration for 90nm technology will be presented. Both programmed and unprogrammed fuse elements were shown to be stable through extensive reliability evaluations. A qualification methodology is demonstrated to define an optimized reliable electrical fuse programming window by combining fuse resistance measurements, physical analysis, and functional sensing data. This methodology addresses the impact on electrical fuse reliability caused by process variation and device degradation (e.g., NBTI) in the sensing circuit and allows an adequate margin to ensure electrical fuse reliability over the chip lifetime

Characterization of bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposition silicate glass films

The bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposition (LPCVD) undoped silicate glass and phospho-silicate glass (PSG) processes were investigated to study film composition, etch rate, and step coverage. Through the addition of phosphorous doping, LPCVD PSG processing offers an attractive low temperature option. Enhanced deposition rate for the PSG process enables the lowering of the deposition temperature to the 400–500 °C range, thereby minimizing the thermal cycle and offering compatibility with many back-end-of-line processes. Many properties of these films are similar to those of the tetraethoxysilane (TEOS)-based LPCVD oxide. Differences in the film properties compared with the TEOS-based LPCVD oxide films can be traced to the composition of these films and the reaction mechanism.