Chit Hwei Ng

MIM capacitor integration for mixed-signal/RF applications

The relentless drive toward high-speed and high-density silicon-based integrated circuits (ICs) has necessitated significant advances in processing technology. The entrance of copper metallization in IC manufacturing has resulted in new challenges in metal-insulator-metal (MIM) capacitor fabrication, one of the key building blocks in analog/mixed signal/RFCMOS circuits. The requirement to reduce passive chip space has led to active researches for MIM with high dielectric constant (/spl kappa/) film. This paper provides an overview of MIM capacitor integration issues with the transition from AlCu backend of line (BEOL) to Cu BEOL. The key to MIM capacitor electrical properties can be achieved with optimized dielectrics. The different MIM capacitor architectures published are also described. Special emphasis is made on the properties of various MIM with high-/spl kappa/ dielectrics in the last section.

Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.

Characterization and comparison of two metal-insulator-metal capacitor schemes in 0.13 /spl mu/m copper dual damascene metallization process for mixed-mode and RF applications

In this paper, we report on two manufacturable, low-cost MIM capacitor structures with Cu and Ta bottom electrode for 0.13 /spl mu/m 6-level Cu-metallization technology. The quality factor (Q) of the MIM capacitor with SiN dielectric directly deposited on the Cu surface is found to be twice as high as that with Ta bottom plate. Both the Cu and Ta bottom-plate capacitors were found to exhibit low leakage and high breakdown field strength characteristics, as well as absence of dispersive behaviour, and good voltage and temperature linearity. The impact of the Cu surface roughness on the dielectric reliability was reduced by optimizing SiN precursor gas flow.

Characterization and comparison of single and stacked MIMC in copper interconnect Process for mixed-mode and RF applications

This letter presents the dc and RF study and comparison on four manufacturable single- (one and dual additional masks) and stacked- (intraand multiple inter-) metal-insulator-metal capacitors (MIMCs) in a Cu dual-damascene backend of line process. The capacitors were found to exhibit low leakage and high breakdown field strength, absence of dispersive behavior, and good voltage and temperature linearity. Their quality factor (Q) values are different due to the different electrode series resistance as a result of different architectures. The stacked MIMC offers reduced chip area for the same capacitance value and is a viable manufacturable alternative for current and future precision mixed-mode capacitor incorporating SiN or high-/spl kappa/ dielectric materials.

Enabling wireless communications with state-of-the-art RF CMOS and SiGe BiCMOS technologies

The choice of technology for todays mixed-signal/RF system-on-chip (SOC) designs has been driven by the performance enhancements and cost advantage derived from scaled CMOS technologies. This paper discusses the performance improvements of RF transistors resulting from technology downscaling. Comparisons between scaled RF CMOS and SiGe BiCMOS technologies to highlight the benefits of employing SiGe HBT devices in certain applications are made. Other technology enablements discussed include accurate, scalable models and statistical models to address the need for design flexibility and robust manufacturing. Thereafter the introduction of high Q inductors, high density capacitors and varactors as basic passive components for RF circuits are discussed. Analog requirements such as mismatch, temperature linearity and voltage linearity are also discussed.