Chris E. Barns

Floating Body Cell with Independently-Controlled Double Gates for High Density Memory

An aggressively scaled, self-aligned, independently controlled double-gate floating body cell (IDG FBC) is reported. This structure eases the scaling constraints of other FBC memory devices proposed to date. Enhanced memory performance has been demonstrated owing to the independent back gate with thin oxide and thin Si fin. Memory devices with 85-nm Lg and 30-nm fin widths (Z) have been shown to exhibit better memory characteristics at a lower voltage than alternative FBC structures at comparable dimensions. Design, fabrication, operation, and scalability of IDG FBC devices are discussed

Viewing asperity behavior under the wafer during CMP

RO O F CO PY 0205ESL Viewing Asperity Behavior Under the Wafer during CMP Caprice Gray, Daniel Apone, Chris Rogers, Vincent P. Manno, Chris Barns, Mansour Moinpour, Sriram Anjur, and Ara Philipossian* Department of Mechanical Engineering, Tufts University, Medford, Massachusetts 02155, USA Intel Corporation, Hillsboro, Oregon 97124, USA Cabot Microelectronics, Aurora, Illinois 60504, USA Deptartment of Chemical and Environmental Engineering, The University of Arizona, Tucson, Arizona 85721, USA

QUANTITATIVE IN-SITU MEASUREMENT OF ASPERITY COMPRESSION DURING CHEMICAL MECHANICAL PLANARIZATION

Modifications to the Dual Emission Laser Induced Fluorescence (DELIF) procedure used to collect images of the slurry layer between the polishing pad and wafer during Chemical Mechanical Planarization (CMP) have provided a means to attain instantaneous, high spatial resolution images of slurry film thickness. Presented here is a technique to determine the calibration factor that correlates image intensity to slurry film thickness. This presentation will discuss how to determine slurry layer shape near wafer features, pad roughness, and pad compressibility.Copyright

In-Situ Friction and Pad Topography Measurements During CMP

Duel Emission Laser Induced Fluorescence (DELIF) and friction measurements are taken in-situ during CMP to observe slurry flow beneath a model of an integrated circuit (IC) wafer. Friction measurements average around 7.5 lb and multiple frequencies are observed. Slurry film thicknesses on the order of a 10±3μm were observed during CMP of a flat wafer. The film thickness seems uncorrelated to friction measurements except when the pad and wafer rotation speeds are significantly slowed. DELIF has also accurately measured a 9μm etched step, with noise in the image equal to ±3 μm.