Matthew V. Metz
Northwestern University
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MRS Proceedings | 2000
J. R. Babcock; Anchuan Wang; Nikki L. Edleman; D.D. Benson; Andrew W. Metz; Matthew V. Metz; Tobin J. Marks
For the growth of thin zinc group metal oxide films [i.e. cadmium oxide (CdO), cadmium stannate (Cd 2 SnO 4 ), and zinc oxide (ZnO)] via metal-organic chemical vapor deposition (MOCVD), volatile Cd and Zn precursor families are needed. Starting with Cd, β-ketoiminates of varying substitution were prepared to elucidate structure-property relationships. The nature of the ligand substituents strongly influences the melting point (liquid precursors are desired). Unlike conventional Cd β-diketonates, these complexes are monomeric as determined by x-ray crystallography. Despite these advantageous characteristics, attempts to grow CdO thin films in a cold-wall MOCVD reactor using two such derivatives were not successful. This class of Cd complex appears to decompose thermally with time-- a likely cause of the poor performance. Therefore, a new series of more thermally stable Cd precursors was sought. Using the chelating diamine N,N,N 1 ,N 1 -tetramethylethylenediamine (TMEDA), monomeric β-diketonates were prepared. The molecular structure of Cd(hfa) 2 (TMEDA) (hfa = 1,1,1,5,5,5-hexafluoropentane-2,4-dionate) confirms the monomeric structural assignment. This series of Cd complexes is appreciably more volatile and sublime more cleanly than the aforementioned β-ketoiminates, as determined by vacuum thermogravimetric analysis (TGA). In addition to this advantageous characteristic, these complexes are easily prepared under ambient laboratory conditions from commercially available starting materials in a single step. Following the protocol established for Cd, a volatile series of Zn precursors was also prepared. For the Zn series, the melting point was effectively tuned through variation of both the β-diketonate and diamine ligands. The use of the Cd and Zn β-diketonate precursors in the successful growth of CdO and ZnO thin films, respectively, by MOCVD is also presented.
MRS Proceedings | 2000
Nikki L. Edleman; John A. Belot; J. R. Babcock; Andrew W. Metz; Matthew V. Metz; Charlotte L. Stern; Tobin J. Marks
Lanthanide oxide thin films are of increasing scientific and technological interest to the materials science community. A new class of fluorine-free, volatile, low-melting lanthanide precursors for the metal-organic chemical vapor deposition (MOCVD) of these films has been developed. Initial results from a full synthetic study of these lanthanide-organic complexes are detailed.
Journal of the American Chemical Society | 2003
Sukwon Hong; Shun Tian; Matthew V. Metz; Tobin J. Marks
Journal of the American Chemical Society | 1998
You Xian Chen; Matthew V. Metz; Liting Li; Charlotte L. Stern; Tobin J. Marks
Journal of the American Chemical Society | 2002
Liting Li; Matthew V. Metz; Hongbo Li; Ming Chou Chen; Tobin J. Marks; Louise M. Liable-Sands; Arnold L. Rheingold
Journal of the American Chemical Society | 2005
Hongbo Li; Liting Li; David J. Schwartz; Matthew V. Metz; Tobin J. Marks; Louise M. Liable-Sands; Arnold L. Rheingold
Angewandte Chemie | 2000
Matthew V. Metz; David J. Schwartz; Charlotte L. Stern; Peter N. Nickias; Tobin J. Marks
Archive | 2007
Gilbert Dewey; Matthew V. Metz; Jack T. Kavalieros; Robert S. Chau
Inorganic Chemistry | 2002
Nikki L. Edleman; Anchuan Wang; John A. Belot; Andrew W. Metz; J. R. Babcock; Amber M. Kawaoka; Jun Ni; Matthew V. Metz; Christine Flaschenriem; Charlotte L. Stern; Louise M. Liable-Sands; Arnold L. Rheingold; P. R. Markworth; R. P. H. Chang; Michael P. Chudzik; Carl R. Kannewurf; Tobin J. Marks
Archive | 2006
Suman Datta; Justin K. Brask; Jack T. Kavalieros; Matthew V. Metz; Mark L. Doczy; Robert S. Chau